Publications

• Communication dans un congrès

InAs based Esaki tunnel diodes

Vinay Kumar Chinni, L. Desplanque, Mohamed Zaknoune, Xavier Wallart

We present simulation results of InAs based Esaki tunnel diodes. InAs homojunction and InAs/AlGaSb heterojunction are considered and we investigate the role of source and drain doping levels as well as band energy discontinuities on the tunneling current of the device. The results are very…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018430⟩

• Communication dans un congrès

Combinaison d'une polarisation élevée et d'une forte tenue en tension pour les transistors AlN/GaN sur Si

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

Nous avons réalisé un transistor à double hétérostructure AlN/GaN/AlGaN sur substrat Silicium (111) combinant une tension de claquage élevée et une faible résistance à l'état passant avec une épaisseur totale de buffer de l'ordre de 2μm. Une technique de gravure locale du substrat a été…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p. ⟨hal-01018416⟩

• Communication dans un congrès

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

4th International Meeting on Dielectric Materials, May 2013, Marrakech, Morocco. ⟨hal-03659197⟩

• Article dans une revue

F center in lithium fluoride revisited : comparison of solid-state physics and quantum-chemistry approaches

Ferenc Karsai, Paul Tiwald, Robert Laskowski, Fabien Tran, David Koller, Stefanie Gräfe, Joachim Burgdörfer, Ludger Wirtz, Peter Blaha

We revisit the theoretical description of the F color center in lithium fluoride employing advanced complementary ab initio techniques. We compare the results from periodic supercell calculations involving density-functional theory (DFT) and post-DFT techniques with those from the embedded-cluster…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, 125429, 12 p. ⟨10.1103/PhysRevB.89.125429⟩. ⟨hal-00968483⟩

• Communication dans un congrès

Room-temperature quantum spin Hall effect in HgTe honeycomb superlattices

Cristiane Morais Smith, Wouter Beugeling, Efterpi Kalesaki, Yann-Michel Niquet, Christophe Delerue, Daniel Vanmaekelbergh

The recent experimental realization of self-assembled honeycomb superlattices of truncated semiconducting nanocrystals has opened a new path to engineer graphene-like structures. Atomistic band-structure calculations for honeycomb lattices of PbSe and CdSe have shown a rich band structure, with…

American Physical Society March Meeting, APS March Meeting 2014, Session B31 - Focus Session : Computational Discovery and Design of New Materials II, 2014, Denver, CO, United States. ⟨hal-00922589⟩

• Article dans une revue

Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

M. Braccini, F. Volpi, Arnaud Devos, G. Raymond, D. Benoit, Pascal Morin

Highly stressed silicon nitride thin films are used in gate first complementary metal oxide semiconductors to improve mobility in the silicon channel. Compressive stresses improve hole mobility in p-type MOS transistors while tensile stresses increase electron mobility in n-type MOS devices. High…

Thin Solid Films, 2014, 551, pp.120-126. ⟨10.1016/j.tsf.2013.11.012⟩. ⟨hal-00925380⟩

• Communication dans un congrès

Theoretical study of the basic mechanisms of DNA damage by therapeutic radiation beams

F. Manca, Stefano Giordano, Pier Luca Palla, Grégoire Perret, E. Lartigau, Dominique Collard, H. Fujita, Fabrizio Cleri

Cancer treatments by photon radiation beams in radiotherapy is currently grounded on a rather empirical understanding of the basic mechanisms of DNA damages. It is well assessed that radiation induces single-strand and double-strand breaks in DNA, being however the various mechanisms largely…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium N - Converging technology for nanobio-applications, 2014, Lille, France. ⟨hal-00966158⟩

• Communication dans un congrès

Integrated measurement platform for thermal conductivity measurements in thin-film crystalline silicon and silicon-germanium

Maciej Haras, Valeria Lacatena, Stéphane Monfray, J.F. Robillard, Thomas Skotnicki, Emmanuel Dubois

Thermoelectric conversion requires materials with low thermal conductivity k high electrical conductivity s and thermopower P. Performance of thermoelectric material is evaluated by the zT=P^2sT/k figure-of-merit. Bi2Te3 or Sb2Te3 are usually used near room temperature but they are harmful,…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00964577⟩

• Communication dans un congrès

Functionalized gold nanoparticles with electropolymerizable π-conjugated systems for a neuro-inspired memristive nanoparticle organic synapse-transistor

Ali Yassin, Maiténa Oçafrain, David Guérin, Stéphane Lenfant, Dominique Vuillaume, Philippe Blanchard, Jean Roncali

Nanoparticle Organic Memory Field-Effect Transistors (NOMFET) are molecule-based devices that exhibit the main behavior of a biological spiking synapse. This behavior is obtained by virtue of the combination of two properties of the NOMFET: the transconductance gain of the transistor and the memory…

Materials Research Society Spring Meeting, MRS Spring 2014, Symposium C - Synthesis and Processing of Organic and Polymeric Materials for Semiconductor Applications, 2014, San Francisco, CA, United States. ⟨hal-00966207⟩

• Communication dans un congrès

Engineering of oxide based resistive switching for neuromorphic computing

F. Alibart, Selina La Barbera, G. Sassine, N. Najjari, Dominique Vuillaume

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", 2014, Autrans, France. ⟨hal-01055005⟩