Publications

• Communication dans un congrès

Nanostructured silicon based superomniphobic surfaces

T.P.N. Nguyen, Rabah Boukherroub, V. Thomy, Yannick Coffinier

5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France. ⟨hal-00823984⟩

• Communication dans un congrès

Numerical investigation of the functionally graded materials by the interaction of the plate guided waves with discontinuities and cracks

Farouk Benmeddour, Emmanuel Moulin, Jamal Assaad

This work intends to give a better comprehension of the guided wave interactions with damage in a functionally graded material (FGM). For this purpose, a two dimensional finite element (FE) method is used to analyse the near field surrounding the damage. Then, the expansion of the solution into…

21st International Congress on Acoustics, ICA 2013, 165th Meeting of the Acoustical Society of America, 52nd Meeting of the Canadian Acoustical Association, 2013, Montréal, Canada. ⟨10.1121/1.4799189⟩. ⟨hal-00823439⟩

• Autre publication scientifique

Caractérisation de couches minces par ondes de surface générées et détectées par sources lasers

Sabrina Fourez

2013. ⟨hal-00823438⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Article dans une revue

Investigation of the anti-biofouling properties of graphene oxide aqueous solutions by electrowetting characterization

G. Perry, Yannick Coffinier, Rabah Boukherroub, V. Thomy

Journal of Materials Chemistry A, 2013, 1, pp.12355-12360. ⟨10.1039/C3TA12576A⟩. ⟨hal-00872093⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that…

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Article dans une revue

Electronic structure and transport properties of Si nanotubes

J. Li, T. Gu, C. Delerue, Y.M. Niquet

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is…

Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩

• Communication dans un congrès

Radio frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Emmanuel Dubois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, D. Gloria, C. Raynaud

8th European Workshop on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2012, 2012, Montpellier, France. pp.73-78, ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00797713⟩

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the…

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Article dans une revue

Surface states and conductivity of silicon nano-wires

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

The transport characteristics of low dimensional semiconductors like silicon nano-wires (SiNWs) rarely conform to expectations from geometry and dopant density, exhibiting significant variations as a function of different surface terminations/conditions. The association of these mechanisms with…

Journal of Applied Physics, 2013, 113 (13), pp.134502. ⟨10.1063/1.4798611⟩. ⟨hal-00809853⟩