Publications

Affichage de 7441 à 7450 sur 16092


  • Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

  • Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

  • Communication dans un congrès

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

D.A. Jameel, A. Alkhatab, N.A. Al Saqri, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S.M. Wang

17th European Molecular Beam Epitaxy Workshop, Euro MBE 2013, 2013, Levi, Finland. ⟨hal-00878890⟩

  • Article dans une revue

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩

  • Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM…

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

  • Communication dans un congrès

Impact of BEOL stress on BiCMOS9MW HBTs

Elodie Canderle, P. Chevalier, G. Avenier, N. Derrier, D. Céli, Christophe Gaquière

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed…

27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 2013, Bordeaux, France. session 13 : Advanced SiGe BiCMOS Processes, paper 13.1, 223-226, ⟨10.1109/BCTM.2013.6798181⟩. ⟨hal-00996056⟩

  • Communication dans un congrès

Technology of inkjet printing applied for flexible electronics

Wei Wei, Mohamed Moez Belhaj, Henri Happy

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, Jun 2013, Grenoble, France. 3 p. ⟨hal-00957772⟩

  • Communication dans un congrès

Scanning probe lithography as perspective tool for hypersonic surface phononic crystal fabrication

Anastasia Pavlova, Sergey Yankin

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 194, 3 p. ⟨hal-00957778⟩