Publications

Affichage de 7491 à 7500 sur 16556


  • Communication dans un congrès

Pushing the limits of GaN-on-silicon device breakdown voltage for high power applications

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France. ⟨hal-00976633⟩

  • Communication dans un congrès

Bulk and surface acoustic waves in solid-fluid Fibonacci layered materials

El Houssaine El Boudouti, Ilyasse Quotane, Bahram Djafari-Rouhani, Youssef El Hassouani, Victor Velasco

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015265⟩

  • Communication dans un congrès

Synthesis and electrical characterisations of a low work function cesium oxide coating for high efficiency thermionic energy converter

François Morini, J.F. Robillard, Stéphane Monfray, I.D. Baikie, Thomas Skotnicki, Emmanuel Dubois

One main challenge associated with solid-state thermoelectric materials is to combine electron-crystal electrical conductivity and phonon-glass thermal properties that are difficult to conciliate. A markedly different principle of thermoelectric conversion is based on the micro-thermionic generator…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium BB - Materials by design for energy applications through theory and experiment, 2014, Lille, France. ⟨hal-00966136⟩

  • Article dans une revue

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

J.F. Millithaler, I. Iniguez-De-La-Torre, A. Iniguez-De-La-Torre, T. Gonz Alez, P. Sangaré, Guillaume Ducournau, Christophe Gaquière, J. Mateos

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode.…

Applied Physics Letters, 2014, 104, 073509, 4 p. ⟨10.1063/1.4866166⟩. ⟨hal-00951554⟩

  • Communication dans un congrès

Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes

H. Mosbahi, M. Charfeddine, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

The AlGaN/GaN high electron mobility transistors (HEMTs) is a promising candidate for microwave applications due to its high power and high temperature. owing to their large and direct band gap, as well as favorable transport properties. Moreover, III-V nitrides could be suitable for the emitters…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961393⟩