Publications

• Communication dans un congrès

Deterministic placement of doping atoms on hydroxylated surfaces

L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, J. Guerrero, N. Chevalier, F. Martin, J.P. Barnes, F. Bertin, C. Durand, Maxime Berthe, B. Grandidier, C. Thieuleux, C. Coperet

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated…

International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩

• Article dans une revue

Exploring electronic structure of one-atom thick polycrystalline graphene films : a nano angle resolved photoemission study

J. Avila, I. Razado, S. Lorcy, R. Fleurier, E. Pichonat, D. Vignaud, X. Wallart, M.C. Asensio

The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far…

Scientific Reports, 2013, 3, pp.2439-1-8. ⟨10.1038/srep02439⟩. ⟨hal-00871897⟩

• Article dans une revue

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, Emmanuel Dubois

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f…

Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

• Article dans une revue

High surface capacity Li-ion all solid state 3D microbattery based on anatase TiO2 deposited by ALD on silicon microstructures

E. Eustache, P. Tilmant, L. Morgenroth, P. Roussel, N. Rolland, Thierry Brousse, C. Lethien

ECS Transactions, 2013, 58, pp.119-129. ⟨10.1149/05810.0119ecst⟩. ⟨hal-00877701⟩

• Communication dans un congrès

Phase Coded Costas Signals for Ambiguity Function Improvement and Grating lobes Suppression

Nadjah Touati, Charles Tatkeu, Thierry Chonavel, Atika Rivenq

In this paper, a novel radar signal is proposed. It is based on a modification of Costas signals obtained by increasing the frequency separation of Costas frequency hops beyond the orthogonality condition. Indeed, Costas codes are well known for their good Range-Doppler properties. Their…

VTC 2013 Fall : IEEE Vehicular Technology Conference (VTC Fall), Sep 2013, Las Vegas, France. 5p. ⟨hal-00918275⟩

• Communication dans un congrès

Graphène artificiel à fort couplage spin-orbite formé par auto-assemblage de nanocristaux de semiconducteurs

Efterpi Kalesaki, Mark Pieter Boneschanscher, Jaco J. Geuchies, Christophe Delerue, Cristiane Morais Smith, Wiel H. Evers, Guy Allan, Thomas Altantzis, Sara Bals, Daniel Vanmaekelbergh

Journées Boîtes Quantiques 2013, JBQ 2013, 2013, Paris, France. ⟨hal-00922582⟩

• Autre publication scientifique

Conception et réalisation de cellules solaires à base de nanostructures silicium

Di Zhou

2013. ⟨hal-00906046⟩

• Communication dans un congrès

Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q

S. Bollaert, Francois Danneville, Yannick Roelens, L. Desplanque, Cyrille Gardes, Sonia Bagumako, Cédric Chambon, Benoît Fauroux, Jean-Philippe Fraysse, Patrice Régnier, Michel Maignan, Peter Friijlink, Rémy Leblanc, Marc Marilier

Les Rencontres du Numérique, 2013, Paris, France. ⟨hal-00974542⟩

• Communication dans un congrès

Impact of BEOL stress on BiCMOS9MW HBTs

Elodie Canderle, P. Chevalier, G. Avenier, N. Derrier, D. Céli, Christophe Gaquière

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed…

27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 2013, Bordeaux, France. session 13 : Advanced SiGe BiCMOS Processes, paper 13.1, 223-226, ⟨10.1109/BCTM.2013.6798181⟩. ⟨hal-00996056⟩

• Communication dans un congrès

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

M. Faucher, G. Martin, J.M. Friedt, S. Ballandras

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first…

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. paper IFCS-EFTF1-B2-5, 21-24, ⟨10.1109/EFTF-IFC.2013.6702231⟩. ⟨hal-00944027⟩