Publications

• Article dans une revue

Exploring electronic structure of one-atom thick polycrystalline graphene films : a nano angle resolved photoemission study

J. Avila, I. Razado, S. Lorcy, R. Fleurier, E. Pichonat, D. Vignaud, X. Wallart, M.C. Asensio

The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far…

Scientific Reports, 2013, 3, pp.2439-1-8. ⟨10.1038/srep02439⟩. ⟨hal-00871897⟩

• Communication dans un congrès

Metallic structures for transformation acoustics and negative index phononic crystals

A.N. Norris, A.J. Nagy, J.L. Cipolla, N.H. Gokhale, Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Special session III.3, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881307⟩

• Communication dans un congrès

Ferroelectric metamaterial perfect absorber

J.P. Hao, Véronique Sadaune, L. Burgnies, Eric Lheurette, D. Lippens

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Session IV.6, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881302⟩

• Communication dans un congrès

Electric charge band gaps in phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

2nd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Optomechanics, PHONONICS 2013, 2013, Sharm El-Sheikh, Egypt. Paper PHONONICS-2013-0148, 120-121. ⟨hal-00881292⟩

• Ouvrages

Lazare and Sadi Carnot. A Scientific and Filial Relationship. 1st ed

Charles C. Gillispie, Raffaele Pisano

Springer, 2013, 978-94-007-4144-7. ⟨hal-04515868⟩

• Communication dans un congrès

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

R. Malmqvist, R. Jonsson, C. Samuelsson, A. Gustafsson, S. Reyaz, D. Dancila, A. Rydberg, B. Grandchamp, S. Seok, M. Fryziel, P.A. Rolland, P. Rantakari, M. Lahti, T. Vaha-Heikkla, R. Baggen

This paper presents the results of some reconfigurable RF-MEMS switching circuits and antennas fabricated using GaAs MMIC and LTCC based processes. Wafer-level packaged GaAs RF-MEMS series and shunt switches demonstrating low losses (≤0.5 dB) up to 40 GHz are presented together with a compact Ka-…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9056, 83-88, ⟨10.1109/SMICND.2013.6688097⟩. ⟨hal-00922405⟩

• Communication dans un congrès

RF power potential of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, D. Gloria

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of…

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩

• Ouvrages

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy

Raffaele Pisano, Danilo Capecchi, Anna Lukešová

The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, 2013, 978-609-95513-0-2. ⟨hal-04517712⟩

• Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM…

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

• Autre publication scientifique

Génération d'ondes acoustiques de surface par différentes sources lasers - Applications à la caractérisation sans contact de défauts

Frédéric Faëse

2013. ⟨hal-00915574⟩