Publications

• Chapitre d'ouvrage

An interferometric diagnostic for the experimental study of dynamics of solids exposed to intense and ultrashort radiation

C. Fourment, F. Deneuville, B. Chimier, D. Descamps, F. Dorchies, S. Hulin, S. Petit, O. Peyrusse, J. J. Santos

no abstract

Juha, L. and Bajt, S. and London, R. and Hudec, R. and Pina, L. Damage to Vuv, Euv, and X-Ray Optics Iv; and Euv and X-Ray Optics: Synergy between Laboratory and Space Iii, 8777, 2013, Proceedings of SPIE. ⟨hal-01561847⟩

• Article dans une revue

Detecting response of microelectromechanical resonators by microwave reflectometry

Bernard Legrand, D. Ducatteau, D. Theron, B. Walter, H. Tanbakuchi

Applied Physics Letters, 2013, 103, pp.053124-1-5. ⟨10.1063/1.4817411⟩. ⟨hal-00871931⟩

• Communication dans un congrès

Nanoscale transport measurements with multiple probe scanning tunneling microscopy

Maxime Berthe, Corentin Durand, R. Leturcq, B. Grandidier

Development of nanometer-sacle probing techniques have become imperative for current flow and resistivity measurements with nanometer scale spatial resolution in a variety of materials and devices. The use of weakly coupled scanning tunneling probes to detect transport phenomena appears to be an…

16th International Congress of Metrology, 2013, Paris, France. S20 Nanotechnology, 13001, 4 p., ⟨10.1051/metrology/201313001⟩. ⟨hal-00877775⟩

• Article dans une revue

A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics

A. Lecavelier Des Etangs-Levallois, Z. K. Chen, Marie Lesecq, Sylvie Lepilliet, Y. Tagro, Francois Danneville, J.F. Robillard, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, J. Ratajczak, Emmanuel Dubois

The ability to realize flexible circuits integrating sensing, signal processing, and communicating capabilities is of central importance for the development of numerous nomadic applications requiring foldable, stretchable, and large area electronics. A key challenge is, however, to combine high…

Journal of Applied Physics, 2013, 113 (15), pp.153701. ⟨10.1063/1.4801803⟩. ⟨hal-00819466⟩

• Communication dans un congrès

Three-Paths Microwave Inteferometric System Based on a Six-Port technique

Kamel Haddadi, Tuami Lasri

This paper presents a new type of six-port instrument to meet the specific needs of electrical characterization tools for impedances clearly different than the standard 50 Omega reference impedance. A method is developed for the precise adjustment of the reference impedance of the measurement…

43rd European Microwave Conference (EuMC), Oct 2013, Nuremberg, Allemagne. pp.1603-1606. ⟨hal-03224674⟩

• Article dans une revue

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2013, 412, pp.126-129. ⟨10.1016/j.physb.2012.11.031⟩. ⟨hal-00796437⟩

• Article dans une revue

GaAs Fabry-Perot cavity photoconductors : switching with picojoule optical pulses

Emilien Peytavit, S. Formont, Jean-Francois Lampin

Electronics Letters, 2013, 49, pp.207-208. ⟨10.1049/el.2012.3993⟩. ⟨hal-00796471⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed…

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of…

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩