Publications

• Communication dans un congrès

A high resolution nonvolatile analog memory ionic devices

L. Gao, F. Alibart, D.B. Strukov

4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩

• Communication dans un congrès

Silicon nanotweezers with a microfluidic cavity for the real time characterization of DNA damage under therapeutic radiation beams

G. Perret, P.T. Chiang, T. Lacornerie, M. Kumemura, N. Lafitte, Hervé Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2013, 2013, Osaka, Japan. paper SuA07.2, 6820-6820. ⟨hal-00909944⟩

• Communication dans un congrès

Analysis of ultrasonic reflection coefficient : application to adhesion measurement at solid/fluid or solid/solid interfaces

N. Collier, Dorothée Debavelaere-Callens, Pierre Campistron, Julien Carlier, Bertrand Nongaillard, Guillaume Delaplace

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944056⟩

• Article dans une revue

Corrosion inhibition of carbon steel in 0.5 M NaCl aqueous solution by humid air plasma treatment

N. Ghali, A. Addou, B. Mutel, B. Benstaali, F. Bentiss, J.L. Brisset

European Physical Journal: Applied Physics, 2013, 61, pp.30801-1-8. ⟨10.1051/epjap/2012120130⟩. ⟨hal-00800579⟩

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the…

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• Article dans une revue

Electrowetting at a liquid metal-oxide-semiconductor junction

S. Arscott

A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type…

Applied Physics Letters, 2013, 103 (14), pp.144101-1-5. ⟨10.1063/1.4822308⟩. ⟨hal-00871933⟩

• Article dans une revue

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

K. Pantzas, G. Patriarche, Éric Le Bourhis, David Troadec, A. Itawi, G. Beaudoin, I. Sagnes, A. Talneau

Applied Physics Letters, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩. ⟨hal-00872063⟩

• Article dans une revue

Progressive multi-layer drop-casting of CdSe nanoparticles for photocurrent down shifing monitoring

Yannick Lambert, Di Zhou, Tao Xu, Odile Cristini, D. Deresmes, B. Grandidier, D. Stievenard

We investigated the spectroscopic photocurrent response of photovoltaic devices versus an increasing number of drop-casted CdSe nanoparticles onto planar and nanocones silicon p-i-n junctions. For all samples, a strong enhancement of the photocurrent in the UV range was detected as well as a…

Applied Physics Letters, 2013, 103 (5), pp.051102-1-4. ⟨10.1063/1.4816956⟩. ⟨hal-00871996⟩

• Article dans une revue

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩

• Proceedings/Recueil des communications

Notes on the Concept of Force in Kepler

Raffaele Pisano, Paolo Bussotti

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of the International 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy, The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, pp.337-344, 2013, 978-609-95513-0-2. ⟨hal-04513863⟩