Publications

• Article dans une revue

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

A. Westlund, P. Sangare, Guillaume Ducournau, P.A. Nilsson, Christophe Gaquière, L. Desplanque, X. Wallart, J. Grahn

Applied Physics Letters, 2013, 103, pp.133504-1-4. ⟨10.1063/1.4821949⟩. ⟨hal-00872026⟩

• Article dans une revue

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier

Applied Physics Letters, 2013, 103, pp.122104-1-4. ⟨10.1063/1.4821293⟩. ⟨hal-00871957⟩

• Article dans une revue

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

F.A. Torres, P. Meng, L. Ju, C. Zhao, D.G. Blair, K.-Y. Liu, S. Chao, M. Martyniuk, Isabelle Roch-Jeune, R. Flaminio, C. Michel

Milligram-scale resonators have been shown to be suitable for the creation of 3-mode optoacoustic parametric amplifiers, based on a phenomena first predicted for advanced gravitational-wave detectors. To achieve practical optoacoustic parametric devices, high quality factor resonators are required…

Journal of Applied Physics, 2013, 114, pp.014506. ⟨10.1063/1.4812731⟩. ⟨in2p3-00859697⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

• Article dans une revue

Global transmission and reflection coefficients of the ultrasonic component in porous media : a new approach

Georges Nassar, Amina Medjdoub, N. Saad

The purpose of this paper is to propose a new approach to determining the global ultrasonic transmission and reflection coefficients in a random porous medium. Boundary conditions at the interface of the medium were used to determine local transmission and reflection coefficients. A study of the…

Ultrasonics, 2013, 53, pp.1097-1103. ⟨10.1016/j.ultras.2013.02.004⟩. ⟨hal-00823965⟩

• Proceedings/Recueil des communications

Notes on the historical conceptual streams for mathematics and physics teaching

Raffaele Pisano

Proceedings of the Lithuanian Mathematical Society, Ser. A, Serie A (54), Vilnius university, pp.vii-xvii, 2013, 0132-2818. ⟨hal-04513852⟩

• Article dans une revue

Coupled mode enhanced giant magnetoplasmonics transverse Kerr effect

L. Halagacka, M. Vanwolleghem, K. Postava, B. Dagens, J. Pistora

Optics Express, 2013, 21, pp.21741-21755. ⟨10.1364/OE.21.021741⟩. ⟨hal-00877668⟩

• Autre publication scientifique

Contributions to cooperative diversity in multiple access UWB systems

Yamen Issa

2013. ⟨hal-00912361⟩

• Article dans une revue

Effect of antimony on structure strained quantum well laser

Abdelkader Aissat, Farid Ykhlef, Said Nacer, Jean-Pierre Vilcot

This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction…

Journal of Optoelectronics and Advanced Materials, 2013, 15, pp.1185-1187. ⟨hal-00922579⟩

• Communication dans un congrès

Structural transitions in ordered supramolecular networks on a semiconductor surface

Guillaume Copie, Christophe Krzeminski, B. Grandidier, Fabrizio Cleri

We report the experimental and theoretical study of the self-assembly of planar organic molecules of the type tris-X-biphenyl-benzene (with X=N, I, Br, CH) on a passivated, boron-doped Si(111)-√3x√3 (R=30°) surface. Ordered molecular structures are observed by high-resolution STM. We perform multi-…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium WW : Self-Organization and Nanoscale Pattern Formation, 2013, Boston, MA, United States. ⟨hal-00944025⟩