Publications

• Article dans une revue

A crown-ether loop-derivatized oligothiophene doubly attached on gold surface as cation-binding switchable molecular junction

T.K. Tran, K. Smaali, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, S. Lenfant, S. Godey, J. Roncali, D. Vuillaume

A crown-ether dithiol quaterthiophene is synthesized and immobilized on gold surface by double covalent fixation. UV-vis spectroscopy and cyclic voltammetry show that the corresponding dithioester precursor can complex Pb2+ in solution and that this property is maintained for monolayers of the…

Advanced Materials, 2013, 25, pp.427-431. ⟨10.1002/adma.201201668⟩. ⟨hal-00796399⟩

• Article dans une revue

AlGaN/GaN HEMTs on silicon substrate with 206-GHz FMAX

S. Bouzid-Driad, H. Maher, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Renvoise, P. Frijlink

IEEE Electron Device Letters, 2013, 34, pp.36-38. ⟨10.1109/LED.2012.2224313⟩. ⟨hal-00796433⟩

• Article dans une revue

Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates

N. Defrance, F. Lecourt, Y. Douvry, Marie Lesecq, Virginie Hoel, A. Lecavelier Des Etangs-Levallois, Y. Cordier, A. Ebongue, Jean-Claude de Jaeger

IEEE Transactions on Electron Devices, 2013, 60, pp.1054-1059. ⟨10.1109/TED.2013.2238943⟩. ⟨hal-00797212⟩

• Article dans une revue

Vertical nanowire array-based field effect transistors for ultimate scaling

G. Larrieu, X.L. Han

Nanoscale, 2013, 5, pp.2437-2441. ⟨10.1039/C3NR33738C⟩. ⟨hal-00797210⟩

• Communication dans un congrès

THz wireless communications at high data rate using plasma-wave field-effect transistors for detection: State of the art and perspectives

S. Blin, L. Tohme, P. Nouvel, A. Pénarier, D. Coquillat, W. Knap, Guillaume Ducournau, Jean-Francois Lampin, S. Bollaert, S. Hisatake, T. Nagatsuma

GDRI – THz, 2013, Montpellier, France. ⟨hal-01929183⟩

• Communication dans un congrès

Cavity modes and optomechanic interactions in phoxonic crystals

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944047⟩

• Communication dans un congrès

Terahertz radiation from meta-atom-loaded photoconductive antennas

Keisuke Takano, T. Nishida, Boyoung Kang, H. Sasaki, F. Miyamaru, Mitsuo Wada Takeda, Willie J. Padilla, M. Hangyo, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811874⟩

• Communication dans un congrès

Sub-THz scalar/vector imaging for objects inspection

Guillaume Ducournau, Y. Kurita, K. Kobayashi, Y. Zapart, Jean-Francois Lampin, T. Otsuji

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811864⟩

• Communication dans un congrès

Piezoresistance and hole mobility in silicon under compressive mechanical stresses of 3 GPa

A.C.H. Rowe, J.S. Milne, S. Arscott

Materials Research Society Spring Meeting, MRS Spring 2013, Symposium A : Film Silicon Science and Technology, 2013, San Francisco, CA, United States. ⟨hal-00811806⟩

• Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩