Publications

• Communication dans un congrès

Series-like InP transferred electron devices for CW submillimeter-wave power pources

Christophe Dalle

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.19-20. ⟨hal-00828413⟩

• Article dans une revue

Recent advances in the development of graphene-based surface plasmon resonance (SPR) interfaces

Sabine Szunerits, N. Maalouli, E. Wijaya, Jean-Pierre Vilcot, Rabah Boukherroub

Analytical and Bioanalytical Chemistry, 2013, 405, pp.1435-1443. ⟨10.1007/s00216-012-6624-0⟩. ⟨hal-00796418⟩

• Article dans une revue

Metallic nanoparticles enhanced the spontaneous emission of semiconductor nanocrystals embedded in nanoimprinted photonic crystals

V. Reboud, Gaëtan Lévêque, M. Striccoli, T. Placido, A. Panniello, M.L. Curri, J. A. Alducin, T. Kehoe, N. Kehagias, D. Mecerreyes, S. Newcomb, D. Iacopino, G. Redmond, C.M. Sotomayor Torres

Nanoscale, 2013, 5, pp.239-245. ⟨10.1039/C2NR32134C⟩. ⟨hal-00796414⟩

• Article dans une revue

Defect-controlled hypersound propagation in hybrid superlattices

D. Schneider, F. Liaqat, E.H. El Boudouti, O. El Abouti, W. Tremel, H.J. Butt, Bahram Djafari-Rouhani, G. Fytas

We employ spontaneous Brillouin light scattering spectroscopy and detailed theoretical calculations to reveal and identify elastic excitations inside the band gap of hypersonic hybrid superlattices. Surface and cavity modes, their strength and anticrossing are unambiguously documented and fully…

Physical Review Letters, 2013, 111, pp.164301-1-5. ⟨10.1103/PhysRevLett.111.164301⟩. ⟨hal-00879487⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that…

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Communication dans un congrès

Wafer-scale integration of piezoelectric actuation capabilities in nanoelectromechanical systems resonators

Denis Dezest, Fabrice Mathieu, Laurent Mazenq, Caroline Soyer, Jean Costecalde, Denis Remiens, Olivier Thomas, Jean-François Deü, Liviu Nicu

In this work, we demonstrate the integration of piezoelectric actuation means on arrays of nanocantilevers at the wafer scale. We use lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale

2013 Nanomechanical Sensing Workshop, May 2013, Stanford, USA, United States. pp.0. ⟨hal-03165172⟩

• Article dans une revue

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Christophe Krzeminski

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the…

Journal of Applied Physics, 2013, 114, 224501, 9 p. ⟨10.1063/1.4839675⟩. ⟨hal-00917560⟩

• Article dans une revue

Modeling of MEMS resonator piezoelectric disc by means of an equicharge current source method

L. Elmaimouni, F.E. Ratolojanahary, Jean-Etienne Lefebvre, J.G. Yu, A. Raherison, Tadeusz Gryba

Ultrasonics, 2013, 53, pp.1270-1279. ⟨10.1016/j.ultras.2013.03.011⟩. ⟨hal-00877662⟩

• Chapitre d'ouvrage

Schottky source/drain MOSFETs

Emmanuel Dubois, Florent Ravaux, Zhenkun Chen, Nicolas Reckinger, Xiaohui Tang, Jean-Pierre Raskin, Maud Vinet, Louis Hutin

Deleonibus S. Intelligent integrated systems : technologies, devices and architectures, Pan Stanford Publishing, section 1, chapter 2, 55-96, 2013, 978-9-8144-1142-4. ⟨hal-00878461⟩

• Article dans une revue

Surface states and conductivity of silicon nano-wires

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

The transport characteristics of low dimensional semiconductors like silicon nano-wires (SiNWs) rarely conform to expectations from geometry and dopant density, exhibiting significant variations as a function of different surface terminations/conditions. The association of these mechanisms with…

Journal of Applied Physics, 2013, 113 (13), pp.134502. ⟨10.1063/1.4798611⟩. ⟨hal-00809853⟩