Publications

• Article dans une revue

Substrate mode-integrated SPR sensor

C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette

Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩

• Communication dans un congrès

High spectral purity microwave and terahertz oscillator

Gwennaël Danion, Goulc'Hen Loas, Ludovic Frein, Cyril Hamel, Anthony Carré, Steve Bouhier, Marc Vallet, Marc Brunel, Antoine Rolland, Mehdi Alouini, François Bondu, Alexandre Beck, Guillaume Ducournau, Mohamed Zaknoune, Christophe Coinon, Xavier Wallart, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Frédéric Cleva, Jean-Pierre Coulon, Mourad Merzougui, Alain Brillet, Gregoire Pillet, Loïc Morvan, Ghaya Baili, Jérôme Bourderionnet

We report on the design of an ultra stable microwave/THz oscillator and on the realization and the characterization of its laser source. The tunable oscillator is expected to show below -150 dB rad2/Hz phase instability at an offset frequency of 10 kHz for a 30 GHz carrier frequency, as well as 18…

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. pp.40-42, ⟨10.1109/EFTF-IFC.2013.6702198⟩. ⟨hal-00944028⟩

• Communication dans un congrès

Electric charge band gaps in phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00934423⟩

• Communication dans un congrès

22 Gbps wireless communication system at 0.4 THz

Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin

By combining a lJTC-PD as a THz emitter and a 400 G Hz Schottky-based heterodyne detection, we realized an indoor THz link working up to 22 Gbps at 400 GHz carrier frequency with ultra-low THz power. The eye diagram at receiver is clearly opened are the system is working with only 1 mu W received…

38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩

• Article dans une revue

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

• Article dans une revue

Corrosion inhibition of carbon steel in 0.5 M NaCl aqueous solution by humid air plasma treatment

N. Ghali, A. Addou, B. Mutel, B. Benstaali, F. Bentiss, J.L. Brisset

European Physical Journal: Applied Physics, 2013, 61, pp.30801-1-8. ⟨10.1051/epjap/2012120130⟩. ⟨hal-00800579⟩

• Article dans une revue

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

K. Pantzas, G. Patriarche, Éric Le Bourhis, David Troadec, A. Itawi, G. Beaudoin, I. Sagnes, A. Talneau

Applied Physics Letters, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩. ⟨hal-00872063⟩

• Article dans une revue

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the…

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• Article dans une revue

Electrowetting at a liquid metal-oxide-semiconductor junction

S. Arscott

A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type…

Applied Physics Letters, 2013, 103 (14), pp.144101-1-5. ⟨10.1063/1.4822308⟩. ⟨hal-00871933⟩