Publications

• Communication dans un congrès

Microscopy with terahertz plasmonic circuits

Ibrahim Türer, Abdallah Chahadih, Y. Zappart, Jean-Francois Lampin, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811865⟩

• Communication dans un congrès

[Invited] Strain effects on carrier mobility in Si and Ge nanowires

Y.M. Niquet, J. Li, D. Rideau, B. Videau, Christophe Krzeminski, C. Delerue

5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France. ⟨hal-00811810⟩

• Communication dans un congrès

[Invited] Terahertz radiation from meta-atom-loaded photoconductive antennas

Keisuke Takano, T. Nishida, Boyoung Kang, H. Sasaki, F. Miyamaru, Mitsuo Wada Takeda, Willie J. Padilla, M. Hangyo, Tahsin Akalin

4th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META'13, 2013, Sharjah, United Arab Emirates. ⟨hal-00811842⟩

• Communication dans un congrès

Fabrication of plasmonic arrays for THz QCL beam-shaping

Mokhtar Zehar, Miguel Beruete, Haian Sebai, H. Agnes, Karine Blary, Miguel Navarro-Cia, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811838⟩

• Communication dans un congrès

AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides

Adrien Cutivet, Alain Agboton, Philippe Altuntas, François Lecourt, Marie Lesecq, Nicolas Defrance, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger, François Boone, Hassan Maher

This paper focuses on the electrical investigation of various AlN/Si interfaces by means of broadband characterization and modeling of CPW (coplanar waveguide) for frequencies up to 50 GHz. These electric measurements are performed under different biases and temperatures in order to investigate the…

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38. ⟨hal-00828412⟩

• Communication dans un congrès

Strain effect on the electronic properties of molecular junctions on sub 10-nm-diameter gold nanocrystals as determined by scanning probe microscopy

N. Clement, S. Desbief, K. Smaali, G. Patriarche, P. Leclere, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878800⟩

• Article dans une revue

Global transmission and reflection coefficients of the ultrasonic component in porous media : a new approach

Georges Nassar, Amina Medjdoub, N. Saad

The purpose of this paper is to propose a new approach to determining the global ultrasonic transmission and reflection coefficients in a random porous medium. Boundary conditions at the interface of the medium were used to determine local transmission and reflection coefficients. A study of the…

Ultrasonics, 2013, 53, pp.1097-1103. ⟨10.1016/j.ultras.2013.02.004⟩. ⟨hal-00823965⟩

• Article dans une revue

Comparison of gold and silver/gold bimetallic surface for highly sensitive near-infrared SPR sensor at 1550 nm

J. Hottin, E. Wijaya, L. Hay, Sophie Maricot, M. Bouazaoui, Jean-Pierre Vilcot

Plasmonics, 2013, 8, pp.619-624. ⟨10.1007/s11468-012-9446-1⟩. ⟨hal-00823962⟩

• Article dans une revue

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces…

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩