Publications

Affichage de 7641 à 7650 sur 16064


  • Communication dans un congrès

Confocal Raman spectroscopy of graphene on hexagonal boron nitride

Sylvain Engels, F. Forster, A. Molina-Sanchez, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

XXVIIth International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2013, 2013, Kirchberg, Austria. ⟨hal-00903354⟩

  • Communication dans un congrès

Low loss microstrip transmission-lines using cyclic olefin copolymer COC-substrate for sub-THz and THz applications

Abdallah Chahadih, Magdalena Chudzik, Israel Arnedo, Abbas Ghaddar, Ivan Arregui, Fernando Teberio, Aintzane Lujambio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

We describe low loss microstrip transmission line with compact coplanar waveguide transitions for sub-terahertz application. The conducting transmission line is fabricated on the surface of a thin cyclic olefin copolymer dielectric layer. A vector network analyzer (VNA) has been used to obtain the…

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper WE P2-81, 2 p., ⟨10.1109/IRMMW-THz.2013.6665702⟩. ⟨hal-00914251⟩

  • Communication dans un congrès

Confinement and losses of THz planar Goubau lines fabricated on a thin silicon substrate

Abdallah Chahadih, Mokhtar Zehar, Abbas Ghaddar, S. Kaya, Ibrahim Türer, Gabriel Moreno, Y. Zapart, Tahsin Akalin

Low loss broad band transmission lines are of great interest for terahertz applications. To overcome high losses, Planar Goubau Lines (PGL) have been designed and fabricated on high resistivity silicon substrate. The measured loss level is typically 1dB/mm around 250GHz. The transitions are also…

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper TU9-3, 2 p., ⟨10.1109/IRMMW-THz.2013.6665622⟩. ⟨hal-00914239⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

  • Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩