Publications

Affichage de 7651 à 7660 sur 16105


  • Article dans une revue

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

A. Westlund, P. Sangare, Guillaume Ducournau, P.A. Nilsson, Christophe Gaquière, L. Desplanque, X. Wallart, J. Grahn

Applied Physics Letters, 2013, 103, pp.133504-1-4. ⟨10.1063/1.4821949⟩. ⟨hal-00872026⟩

  • Article dans une revue

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Liverios Lymperakis, J. Neugebauer, Philippe Caroff, Rafal E Dunin-Borkowski, Philipp Ebert, B. Grandidier

Applied Physics Letters, 2013, 103, pp.122104-1-4. ⟨10.1063/1.4821293⟩. ⟨hal-00871957⟩

  • Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

  • Article dans une revue

Dielectric properties by rectangular waveguide

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Emerging Sciences, 2013, 3, pp.163-171. ⟨hal-00872091⟩

  • Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

  • Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩