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Affichage de 7691 à 7700 sur 16092

Article dans une revue

Reflections on the Scientific Conceptual Streams in Leonardo da Vinci and His Relationship with Luca Pacioli

Raffaele Pisano

Advances in Historical Studies, 2013, 02 (02), pp.32-45. ⟨10.4236/ahs.2013.22007⟩. ⟨hal-04507886⟩

Communication dans un congrès

Design and simulation of Cd1-xZnxTe thin films epitaxied on CdTe substrate for photovoltaic devices applications

A. Aissat, M. Fathi, Jean-Pierre Vilcot

This work concerns the study and the simulation of a structure containing II-VI semiconductor for photovoltaic application. We studied the influence of the zinc concentration on the various parameters of the alloy Cd1-xZnxTe epitaxied on a CdTe substrate. Indeed, the insertion of zinc increases the…

TerraGreen 13 International Conference 2013 - Advancements in Renewable Energy and Clean Environment, 2013, Beirut, Lebanon. pp.86-93, ⟨10.1016/j.egypro.2013.07.011⟩. ⟨hal-00877760⟩

Communication dans un congrès

Surface acoustic waves control with external magnetic field in TbCo2/FeCo films

I. Lisenkov, A. Klimov, V. Onoprienko, V. Preobrajenski, Philippe Pernod, S. Nikitov

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944034⟩

Communication dans un congrès

Cavity modes and optomechanic interactions in phoxonic crystals

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944047⟩

Communication dans un congrès

THz wireless communications at high data rate using plasma-wave field-effect transistors for detection: State of the art and perspectives

S. Blin, L. Tohme, P. Nouvel, A. Pénarier, D. Coquillat, W. Knap, Guillaume Ducournau, Jean-Francois Lampin, S. Bollaert, S. Hisatake, T. Nagatsuma

GDRI – THz, 2013, Montpellier, France. ⟨hal-01929183⟩

Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩

Communication dans un congrès

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

M. Deng, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine, D. Gloria, N. Derrier, P. Chevalier

By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391. ⟨hal-00922492⟩