Publications

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces…

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent…

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩

• Article dans une revue

Dielectric properties by rectangular waveguide

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Emerging Sciences, 2013, 3, pp.163-171. ⟨hal-00872091⟩

• Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Autre publication scientifique

Contribution à l'étude et à la réalisation de systèmes de communication inter puces à très haut débit en gamme millimétrique

Samuel Foulon

2013. ⟨hal-00825117⟩

• Article dans une revue

Shift and torsion contact problems for arbitrary axisymmetric normal stress distributions

Grey Sh Boltachev, Vladislav Aleshin

In this paper, we analyze the contact interaction of axisymmetric particles subject to a subsequent application of a constant normal load and a tangential or rotational force. A rigorous solution to the frictional contact problem is given by the known Jäger theorem that presents a relationship…

International Journal of Solids and Structures, 2013, 50, pp.2894-2900. ⟨10.1016/j.ijsolstr.2013.05.004⟩. ⟨hal-00871907⟩

• Article dans une revue

Thermal effects in magnetoelectric memories with stress-mediated switching

S. Giordano, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky

Journal of Physics D: Applied Physics, 2013, 46, pp.325002-1-12. ⟨10.1088/0022-3727/46/32/325002⟩. ⟨hal-00871920⟩

• Article dans une revue

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

J.C. Chacon-Torres, L. Wirtz, T. Pichler

ACS Nano, 2013, 7, pp.9249-9259. ⟨10.1021/nn403885k⟩. ⟨hal-00878430⟩

• Article dans une revue

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both…

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩