Publications

• Communication dans un congrès

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

M. Deng, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine, D. Gloria, N. Derrier, P. Chevalier

By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391. ⟨hal-00922492⟩

• Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

• Article dans une revue

Addition of HfO$_2$ interface layer for improved synaptic performance of phase change memory (PCM) devices

M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we will focus on the use of phase change memory (PCM) to emulate synaptic behavior in emerging neuromorphic system-architectures. In particular, we will show that the performance and energy-efficiency of large scale neuromorphic systems can be improved by engineering individual PCM…

Solid-State Electronics, 2013, 79, pp.227-232. ⟨10.1016/j.sse.2012.09.006⟩. ⟨hal-00795982⟩

• Communication dans un congrès

Surface acoustic waves control with external magnetic field in TbCo2/FeCo films

I. Lisenkov, A. Klimov, V. Onoprienko, V. Preobrajenski, Philippe Pernod, S. Nikitov

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944034⟩

• Communication dans un congrès

Cavity modes and optomechanic interactions in phoxonic crystals

Said El-Jallal, M. Oudich, Yan Pennec, Bahram Djafari-Rouhani

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944047⟩

• Article dans une revue

Open problems in mathematical modelling and physical experiments: exploring exponential function

Raffaele Pisano, Paolo Bussotti

Generally speaking the exponential function has large applications and it is used by many non physicians and non mathematicians, too. Nevertheless some crucial and practical problems happen for its mathematical understanding. Mostly, this part of mathematical cognitive programmes introduce it from…

Problems of Education in the 21st Century, 2012, 50 (1), pp.56-69. ⟨10.33225/pec/12.50.56⟩. ⟨hal-04507892⟩

• Brevet

Système de transmission sans fil

S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland

N° de brevet: FR2976429 (A1). 2012. ⟨hal-00765132⟩

• Communication dans un congrès

[Invité] Multi-excitons dans les nanostructures de semiconducteurs

Christophe Delerue, Guy Allan

Deuxième édition des Journées Nationales du Photovoltaïque, JNPV 2012, Dec 2012, Chantilly, France. ⟨hal-00797752⟩

• Article dans une revue

An accurate determination of the surface energy of solid selenium

G. Guisbiers, S. Arscott, R. Snyders

Applied Physics Letters, 2012, 101 (23), pp.231606. ⟨10.1063/1.4769358⟩. ⟨hal-02345720⟩

• Article dans une revue

On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

Philippe Vennéguès, Jean Michel Chauveau, Z. Bougrioua, Tiankai Zhu, Denis Martin, Nicolas Grandjean

The microstructure of nonpolar heteroepitaxial wurtzite films (GaN and ZnO-based) is dominated by the presence of planar basal stacking faults (BSFs). In this paper, transmission electron microscopy studies of both GaN and ZnO nonpolar films oriented either (11–20) or (1–100) and grown on sapphire…

Journal of Applied Physics, 2012, 112 (11), pp.113518. ⟨10.1063/1.4768686⟩. ⟨hal-02906733⟩