Publications

• Article dans une revue

Broadband dielectric characterization of sapphire/TiOx/Ba0.3Sr0.7TiO3 (111)-oriented thin films for the realization of a tunable interdigitated capacitor

A. Ghalem, Freddy Ponchel, Denis Remiens, Jean-François Legier, T. Lasri

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2013, 60, pp.880-887. ⟨10.1109/TUFFC.2013.2645⟩. ⟨hal-00821236⟩

• Communication dans un congrès

[Invited] Graphene : what challenges for RF applications ?

H. Happy, D. Mele, S. Fregonèse, H. Kim, E. Pichonat, Sylvie Lepilliet, C. Sire, Vincent Derycke, D. Vignaud, Gilles Dambrine

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. papier 324, 1-4. ⟨hal-00804733⟩

• Communication dans un congrès

Comparaison entre les formes d'onde Gegenbauer et Hermite dans un système IR-ULB synchrones et asynchrones basé sur les modulations M-OAM

Khadija Hamidoun, Raja Elassali, Khalid Elbaamrani, Yassin El Hillali, F. Elbahharr, Atika Rivenq

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Maroc. papier 257, 1-4. ⟨hal-00804739⟩

• Communication dans un congrès

Terahertz sensing of supercooled glycerol using a 1D photonic crystal

Juraj Sibik, Hynek Nemec, Christelle Kadlec, Filip Kadlec, Vladimir Skoromets, Karine Blary, J. Axel Zeitler, Petr Kužel

We have developed a 1D photonic crystal that can be used for sensing purposes at terahertz frequencies and which requires less then one microliter of sample material. Using this sensor we have obtained temperature dependent measurements of refractive index and extinction coefficient of glycerol in…

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper TH8-4, 2 p., ⟨10.1109/IRMMW-THz.2013.6665911⟩. ⟨hal-00914233⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 2/3]

Raffaele Pisano

2013. ⟨hal-04511053⟩

• Communication dans un congrès

Characterization of InxGa1-xN/GaN heterostructures for x~0.30 and x~0.55 by XRD and TEM methods

I. Dogmus, A. Addad, C. Lethien, P. Roussel, El Hadj Dogheche, N. Rolland, F Medjdoub

3èmes Journées Nationales sur la Récupération et le Stockage d'Energie pour l'Alimentation des Microsystèmes Autonomes, JNRSE 2013, 2013, Toulouse, France. 2 p. ⟨hal-00878378⟩

• Proceedings/Recueil des communications

The Modern Thermodynamics as based on the Principle of Virtual Laws

Raffaele Pisano, Antonino Drago

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of the International 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy, The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, pp.345-352, 2013, 978-609-95513-0-2. ⟨hal-04513866⟩

• Autre publication scientifique

Réalisation et caractérisation de transistors HEMTs GaN pour des applications dans le domaine millimétrique

Samira Bouzid-Driad

2013. ⟨hal-00919597⟩

• Article dans une revue

Acoustic tracking of Cassie to Wenzel wetting transitions

Renaud Dufour, Nadine Saad, Julien Carlier, Pierre Campistron, George Nassar, Malika Toubal, Rabah Boukherroub, Vincent Senez, Bertrand Nongaillard, Vincent Thomy

Many applications involving superhydrophobic materials require accurate control and monitoring of wetting states and wetting transitions. Such monitoring is usually done by optical methods, which are neither versatile nor integrable. This letter presents an alternative approach based on acoustic…

Langmuir, 2013, 29 (43), pp.13129-13134. ⟨10.1021/la402481b⟩. ⟨hal-00903760⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT technology

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd European Solid-State Device Research Conference, ESSDERC 2013, 2013, Bucharest, Romania. pp.57-60, ⟨10.1109/ESSDERC.2013.6818818⟩. ⟨hal-00997378⟩