Publications

• Communication dans un congrès

Structure and functionality: Raman spectroscopic assessment of colloid-based nanostructured materials

S. Turrell, C. Kinowski, K. Raulin, R. Bernard, D. Stievenard, B. Capoen, A. Boé, Di Zhou, Odile Cristini, V.T.T. Tran

ICORS-International Congress on Raman Spectroscopy, Aug 2012, Bangalore, India. ⟨hal-00744456⟩

• Brevet

Dispositif microélectromécanique avec structure d'actionnement piezoélectrique

M. Faucher

N° de brevet: FR2971243 (A1). 2012. ⟨hal-00726444⟩

• Article dans une revue

Optical absorption of silicon nanowires

Tao Xu, Yannick Lambert, Christophe Krzeminski, B. Grandidier, Didier Stiévenard, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani

We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods : the first one, based on the Green function formalism, is useful to calculate…

Journal of Applied Physics, 2012, 112, pp.033506. ⟨10.1063/1.4739708⟩. ⟨hal-00732649⟩

• Poster de conférence

Graphene-based high performance surface plasmon resonance (SPR) biosensors

Thomas Maurer, Lou Carlier, Mikael Renault, Aurélien Sarrazin, Julien Proust, Jean-Louis Bijeon, Edy Wijaya, Jean-Pierre Vilcot, Jerome Plain, Rabah Boukherroub, Sabine Szunerits

Nano2012, Aug 2012, Rhodes, France. ⟨hal-02518871⟩

• Communication dans un congrès

Localized nanocrystal growth in vitreous matrices by optical methods and for optical applications

B. Capoen, H. El Hamzaoui, K. Raulin, M. Tonelli, A. Chahadih, O. Cristini, C. Kinowski, S. Turrell, R. Bernard, M. Bouazaoui

XI International Conference on Nanostructured Materials, Aug 2012, Rhodes, Greece. ⟨hal-00744462⟩

• Communication dans un congrès

Integrated InAs quantum dot in terahertz microresonator for high frequency quantum manipulation

Abbas Ghaddar, Tahsin Akalin, Guillaume Ducournau, Jean-Francois Lampin, Philippe Caroff, David Troadec, X. Wallart, Renaud Leturcq

31st International Conference on the Physics of Semiconductors, ICPS 2012, Jul 2012, Zurich, Switzerland. ⟨hal-00798150⟩

• Communication dans un congrès

Charge transfers from doped silicon nanocrystals probed by non-contact atomic force microscopy

Lukasz Borowik, D. Deresmes, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

International Conference on Nanoscience and Technology, ICN+T 2012, Jul 2012, Paris, France. ⟨hal-00797758⟩

• Communication dans un congrès

A neuro-inspired memristive organic-nanoparticule synapse-transistor (synapstor)

Dominique Vuillaume, F. Alibart, Stéphane Pleutin, David Guérin, Olivier Bichler, Christian Gamrat

International Conference on Nanoscience and Technology, ICN+T 2012, Jul 2012, Paris, France. ⟨hal-00797675⟩

• Article dans une revue

Polarization-dependent light extinction in ensembles of polydisperse vertical semiconductor nanowires: A Mie scattering effective medium

Grzegorz Grzela, D. Hourlier-Bahloul, Jaime Gómez Rivas

We present an experimental and theoretical study of the angle- and polarization-dependent light extinction in random arrays of polydisperse semiconductor nanowires epitaxially grown on substrates. The specular reflectance is described by averaging the scattering properties of individual nanowires…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (4), pp.045305-1-7. ⟨10.1103/PhysRevB.86.045305⟩. ⟨hal-02396333⟩

• Article dans une revue

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

Vikram Passi, Ulf Sodervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, Christophe Krzeminski, Emmanuel Dubois, Bert Du Bois, Jean-Pierre Raskin

Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This…

Microelectronic Engineering, 2012, 95, pp.83-89. ⟨10.1016/j.mee.2012.01.005⟩. ⟨hal-00643499v2⟩