Publications

• Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

• Communication dans un congrès

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

M. Faucher, G. Martin, J.M. Friedt, S. Ballandras

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first…

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. paper IFCS-EFTF1-B2-5, 21-24, ⟨10.1109/EFTF-IFC.2013.6702231⟩. ⟨hal-00944027⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed…

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Communication dans un congrès

Micromachined high-frequency ZnO ultrasonic linear arrays

Jin-Ying Zhang, Wei-Jiang Xu, G. Han, Julien Carlier, X.M. Ji, S.M. Chen, B. Xu

ZnO thin film has been widely applied in highfrequency acoustic microscopy using single element transducer. It needs mechanical scanning which is much more timeconsuming than electronic scanning with transducer array. However, one of the challenges in the implementation of ZnO transducer array is…

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. paper IUS5-PA-4, 512-515, ⟨10.1109/ULTSYM.2013.0133⟩. ⟨hal-00944057⟩

• Communication dans un congrès

[Invited] Towards a low-consumption structural health monitoring sensor network concept exploiting physics-based signal processing of reverberant ambient acoustics fields for transportation structure monitoring

Jamal Assaad, Hossep Achdjian, Emmanuel Moulin, Farouk Benmeddour, S. Dijili, Michael Bocquet, Lynda Chehami

TELECOM'2013 and 8èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2013, Marrakech, Morocco. ⟨hal-00804746⟩

• Article dans une revue

Global transmission and reflection coefficients of the ultrasonic component in porous media : a new approach

Georges Nassar, Amina Medjdoub, N. Saad

The purpose of this paper is to propose a new approach to determining the global ultrasonic transmission and reflection coefficients in a random porous medium. Boundary conditions at the interface of the medium were used to determine local transmission and reflection coefficients. A study of the…

Ultrasonics, 2013, 53, pp.1097-1103. ⟨10.1016/j.ultras.2013.02.004⟩. ⟨hal-00823965⟩

• Communication dans un congrès

Highly oriented (00.2) aluminum nitride close to single crystal using (111) titanium nitride buffer layer for microwave high power electro-acoustic devices

A. Soltani, Abdelkrim Talbi, V. Mortet, A. Bassam, J.C. Gerbedoen, G. Patriarche, Jean-Claude de Jaeger, Philippe Pernod

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944055⟩

• Article dans une revue

Coupled mode enhanced giant magnetoplasmonics transverse Kerr effect

L. Halagacka, M. Vanwolleghem, K. Postava, B. Dagens, J. Pistora

Optics Express, 2013, 21, pp.21741-21755. ⟨10.1364/OE.21.021741⟩. ⟨hal-00877668⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩

• Communication dans un congrès

Functionalized gold nanoparticles with electropolymerizable conjugated systems for organic transistors behaving as biological synapse

A. Yassin, M. Oçafrain, David Guérin, S. Lenfant, D. Vuillaume, J. Roncali, P. Blanchard

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878944⟩