Publications

Affichage de 7971 à 7980 sur 16307


  • Article dans une revue

A proof of concept of a non-resonant near-field microwave microscope based on a high impedance reflectometer

D. Glay, A. El Fellahi, T. Lasri

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.301-308. ⟨10.1017/S1759078713000536⟩. ⟨hal-00872090⟩

  • Article dans une revue

Water content effect on the dielectric properties of cellular concrete material

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

Advances in Microwave and Wireless Technologies, 2013, 1, pp.12-15. ⟨10.12966/awmt.07.01.2013⟩. ⟨hal-00872092⟩

  • Communication dans un congrès

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

M. Deng, Sylvie Lepilliet, Francois Danneville, Gilles Dambrine, D. Gloria, N. Derrier, P. Chevalier

By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391. ⟨hal-00922492⟩

  • Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

  • Chapitre d'ouvrage

Ultrafast charge carrier dynamics in conjugated polymer

H. Diesinger, E. Chan, J. Yin, C. Soci

Ostroverkhova O. Handbook of organic materials for optical and optoelectronic devices : properties and applications, Woodhead Publishing Ltd, pp.318-355, 2013, 978-0-85709-265-6. ⟨hal-00878466⟩

  • Communication dans un congrès

[Invited] Scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, E. Moreau, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

PDI Topical Workshop on MBE-Grown Graphene, 2013, Berlin, Germany. ⟨hal-00878498⟩