Publications

• Chapitre d'ouvrage

Millimeter-wave characterization of silicon devices under small-signal regime : instruments and measurement methodologies

Gilles Dambrine

This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement…

Crupi G., Schreurs D.M. Microwave de-embedding - From theory to applications, Academic Press, chapter 2, 47-96, 2013, 978-0-12-401700-9. ⟨10.1016/B978-0-12-401700-9.00002-1⟩. ⟨hal-00926037⟩

• Communication dans un congrès

Graphene layers grown by RTP-CVD on nickel and copper and their properties

E. Pichonat, H. Kim, D. Vignaud, R. Fleurier, H. Happy

European Workshop on Epitaxial Graphene, EWEG 2013, 2013, Aussois, France. ⟨hal-00811763⟩

• Communication dans un congrès

Synthesis of passive terahertz devices in coplanar technology

Magdalena Chudzik, Abdallah Chahadih, Israel Arnedo, Abbas Ghaddar, Aintzane Lujambio, Fernando Teberio, Ivan Arregui, Guillaume Ducournau, Jean-Francois Lampin, David Benito, Txema Lopetegi, Miguel A. G. Laso, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811863⟩

• Communication dans un congrès

Terahertz plasmonic Y-splitters with planar Goubau Lines

Ibrahim Türer, Abdallah Chahadih, Y. Zappart, Jean-Francois Lampin, Tahsin Akalin

International Workshop on Terahertz Science and Technology, OTST 2013, 2013, Kyoto, Japan. ⟨hal-00811873⟩

• Communication dans un congrès

[Invité] Caractérisation des composants silicium en gamme de fréquence millimétrique

Christophe Gaquière

Journées Thématiques du GdR Ondes, RF/millimétrique et optique intégrée, 2013, Grenoble, France. ⟨hal-00811822⟩

• Article dans une revue

High quality factor mg-scale silicon mechanical resonators for 3-mode optoacoustic parametric amplifiers

F.A. Torres, P. Meng, L. Ju, C. Zhao, D.G. Blair, K.-Y. Liu, S. Chao, M. Martyniuk, Isabelle Roch-Jeune, R. Flaminio, C. Michel

Milligram-scale resonators have been shown to be suitable for the creation of 3-mode optoacoustic parametric amplifiers, based on a phenomena first predicted for advanced gravitational-wave detectors. To achieve practical optoacoustic parametric devices, high quality factor resonators are required…

Journal of Applied Physics, 2013, 114, pp.014506. ⟨10.1063/1.4812731⟩. ⟨in2p3-00859697⟩

• Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

• Article dans une revue

In situ high-temperature characterization of AlN-based surface acoustic wave devices

T. Aubert, Jochen Bardong, Ouarda Legrani, O. Elmazria, M. Badreddine Assouar, Gudrun Bruckner, Abdelkrim Talbi

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 °C and 1050 °C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed…

Journal of Applied Physics, 2013, 114 (1), pp.014505. ⟨10.1063/1.4812565⟩. ⟨hal-00871910⟩

• Communication dans un congrès

Theoretical study of phase and amplitude characteristics of microwave coplanar delay line containing thin ferroelectric layer

V. Nikolaevtsev, S. Yankin, S. Suchkov, D. Suchkov, A. Litvinenko

COMSOL Conference 2013, 2013, Rotterdam, Netherlands. ⟨hal-00881295⟩

• Article dans une revue

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

F. Fromm, M.H. Oliveira, A. Molina-Sanchez, M. Hundhausen, J.M.J. Lopes, H. Riechert, L. Wirtz, T. Seyller

We report a Raman study of the so-called buffer layer with (6√3 × 6√3)R30◦ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of…

New Journal of Physics, 2013, 15, pp.043031-1-11. ⟨10.1088/1367-2630/15/4/043031⟩. ⟨hal-00823434⟩