Publications

• Article dans une revue

Phonons in Slow Motion: Dispersion Relations in Ultra-Thin Si Membranes

John Cuffe, Emigdio Chavez, Andrey Shchepetov, Pierre-Olivier Chapuis, El Houssaine El Boudouti, Francesc Alzina, Timothy Kehoe, Jordi Gomis-Bresco, Damian Dudek, Yan Pennec, Bahram Djafari-Rouhani, Mika Prunnila, Jouni Ahopelto, Clivia. M. Sotomayor Torres

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as \sim 8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than one order of magnitude compared to bulk values. The…

Nano Letters, 2012, 12 (7), pp.3569-3573. ⟨10.1021/nl301204u⟩. ⟨hal-00732480⟩

• Article dans une revue

A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate…

Advanced Functional Materials, 2012, 22, pp.609-616. ⟨10.1002/adfm.201101935⟩. ⟨hal-00787366⟩

• Communication dans un congrès

Measuring the thermal conductivity of substrates using the 3 omega method

N. Al Khudary, Pierre-Yves Cresson, T. Lasri

Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, JNRDM 2012, 2012, Marseille, France. pp.1-4. ⟨hal-00806624⟩

• Communication dans un congrès

Le PbxSr1-xTiO3 : une alternative au BaxSr1-xTiO3 pour applications microondes accordables

Freddy Ponchel, X. Lei, Denis Remiens, Jean-François Legier, T. Lasri, Gang Wang, X. Dong

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S2, papier ID69, 1-4. ⟨hal-00806630⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this…

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Communication dans un congrès

A 60 GHz transceiver for low power ad hoc networks

Christophe Loyez, N. Rolland, Michael Bocquet

IEEE International Conference on Green Computing and Communications, GreenCom 2012, Workshop on Energy and Wireless Sensors, e-WiSe 2012, 2012, Besançon, France. pp.session 2 : Power Management, 671-674, ⟨10.1109/GreenCom.2012.108⟩. ⟨hal-00811708⟩

• Proceedings/Recueil des communications

Il Trattato di Fortificazione di Galileo Galilei (Galileio Galilei's Trattato di Fortificazione)

Raffaele Pisano, Danilo Capecchi

Proceedings of the 4th History of Engineering Conference, I, Cuzzolin, pp.77-90, 2012, 978-88-87479-48-5. ⟨hal-04514409⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: I. Kinetics of N-2(B (3)Pi(g)) and N-2(C (3)Pi(u)) states

Foissac C, Kristof J, Annusova A, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055021⟩. ⟨hal-03090542⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: II. Vibrational distribution of the N-2(C (3)Pi(u), nu '') state

Annusova A, Foissac C, Kristof J, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055022⟩. ⟨hal-03090546⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩