Publications

• Communication dans un congrès

A GaAs MMIC single-chip RF-MEMS switched tunable LNA

R. Malmqvist, C. Samuelsson, S. Reyaz, A. Gustafsson, S. Seok, M. Fryziel, P.A. Rolland, B. Grandchamp, R. Baggen

35th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2013, 2013, Monterey, CA, United States. 4 p., ⟨10.1109/CSICS.2013.6659199⟩. ⟨hal-00906043⟩

• Communication dans un congrès

Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing

L.G. Gao, F. Merrikh-Bayat, F. Alibart, X.J. Guo, B.D. Hoskins, K.T. Cheng, D.B. Strukov

9th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013, 2013, New-York, NY, United States. pp.19-22, ⟨10.1109/NanoArch.2013.6623031⟩. ⟨hal-00909953⟩

• Communication dans un congrès

Low loss microstrip transmission-lines using cyclic olefin copolymer COC-substrate for sub-THz and THz applications

Abdallah Chahadih, Magdalena Chudzik, Israel Arnedo, Abbas Ghaddar, Ivan Arregui, Fernando Teberio, Aintzane Lujambio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

We describe low loss microstrip transmission line with compact coplanar waveguide transitions for sub-terahertz application. The conducting transmission line is fabricated on the surface of a thin cyclic olefin copolymer dielectric layer. A vector network analyzer (VNA) has been used to obtain the…

38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Sep 2013, Mainz, Germany. paper WE P2-81, 2 p., ⟨10.1109/IRMMW-THz.2013.6665702⟩. ⟨hal-00914251⟩

• Article dans une revue

Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET

Mohd F. Mohd Razip Wee, Arash Dehzangi, S. Bollaert, Nicolas Wichmann, Burhanuddin Y. Majlis

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter…

PLoS ONE, 2013, 8, e82731, 8 p. ⟨10.1371/journal.pone.0082731⟩. ⟨hal-00922403⟩

• Article dans une revue

Acoustic techniques for concrete evaluation: improvements, comparisons and consistency

Vincent Garnier, Bogdan Piwakowski, Odile Abraham, Géraldine Villain, Cédric Payan, Jean François Chaix

In civil engineering, the testing of structures allows a large number of chemical, mechanical and micro–macro structural parameters to be determined. Within the scope of ultrasonic Non-Destructive Testing (NDT), which is often used to evaluate concrete, many different techniques can be employed to…

Construction and Building Materials, 2013, 43, pp.598-613. ⟨10.1016/j.conbuildmat.2013.01.035⟩. ⟨hal-00813152⟩

• Chapitre d'ouvrage

Modeling and design of BAW resonators and filters for integration in a UMTS transmitter

Matthieu Chatras, Stéphane Bila, S. Giraud, L. Catherinot, J. Fan, Dominique Cros, M. Aubourg, A. Flament, A. Frappé, B. Stefanelli, A. Kaiser, A. Cathelin, J.B. David, A. Reinhardt, L. Leyssenne, E. Kerhervé

Marco G. Beghi. Modeling and measurement methods for acoustic waves and for acoustic microdevices, InTech, pp.323-354, 2013, 978-953-51-1189-4. ⟨10.5772/56026⟩. ⟨hal-00878455⟩

• Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

• Article dans une revue

Addition of HfO$_2$ interface layer for improved synaptic performance of phase change memory (PCM) devices

M. Suri, O. Bichler, Q. Hubert, L. Perniola, V. Sousa, C. Jahan, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we will focus on the use of phase change memory (PCM) to emulate synaptic behavior in emerging neuromorphic system-architectures. In particular, we will show that the performance and energy-efficiency of large scale neuromorphic systems can be improved by engineering individual PCM…

Solid-State Electronics, 2013, 79, pp.227-232. ⟨10.1016/j.sse.2012.09.006⟩. ⟨hal-00795982⟩

• Article dans une revue

Mixed metallic Ba(Co,Mn)X0.2-xO3-δ (X=F, Cl) hexagonal perovskites

M. Iorgulescu, P. Roussel, N. Tancret, N. Renaut, Nicolas Tiercelin, O. Mentre

Journal of Solid State Chemistry, 2013, 198, pp.210-217. ⟨10.1016/j.jssc.2012.09.040⟩. ⟨hal-00796408⟩

• Article dans une revue

A crown-ether loop-derivatized oligothiophene doubly attached on gold surface as cation-binding switchable molecular junction

T.K. Tran, K. Smaali, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, S. Lenfant, S. Godey, J. Roncali, D. Vuillaume

A crown-ether dithiol quaterthiophene is synthesized and immobilized on gold surface by double covalent fixation. UV-vis spectroscopy and cyclic voltammetry show that the corresponding dithioester precursor can complex Pb2+ in solution and that this property is maintained for monolayers of the…

Advanced Materials, 2013, 25, pp.427-431. ⟨10.1002/adma.201201668⟩. ⟨hal-00796399⟩