Publications

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Communication dans un congrès

Modélisation aéroélastique du vol battu pour son application au design d'un nano-drone résonant

T. Vanneste

10èmes Journées des Doctorants MFE/Nord (DAAP/DAFE/DEFA/DSNA), 2012, Châtillon, France. ⟨hal-00798847⟩

• Communication dans un congrès

Increased performances for ODH of propane on metal foam supported VOx/TiO2 catalytic systems

A. Lofberg, A. Essakhi, S. Paul, P. Supiot, B. Mutel, E. Bordes-Richard

12th International Conference on Microreaction Technology, IMRET 12, 2012, Lyon, France. ⟨hal-00798845⟩

• Communication dans un congrès

Characterization by laser-ultrasonics of thin film/substrate structure : application to the detection of microcracks

Sabrina Fourez, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. ⟨hal-00798860⟩

• Chapitre d'ouvrage

Modelling the damping of piezoelectric structures with ATILA

J.C. Debus

Uchino K., Debus J.C. Applications of ATILA FEM software to smart materials : case studies in designing devices, Woodhead Publishing Ltd, Chapter 12, 281-304, 2012, ISBN 978-0-8570-9065-2. ⟨hal-00798898⟩

• Chapitre d'ouvrage

Finite element analysis of flexural vibration of orthogonally stiffened cylindrical shells with ATILA

J.C. Debus

Uchino K., Debus J.C. Applications of ATILA FEM software to smart materials : case studies in designing devices, Woodhead Publishing Ltd, Chapter 4, 67-93, 2012, ISBN 978-0-8570-9065-2. ⟨hal-00798895⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩

• Article dans une revue

Lode dependency in the cold die powder compaction process

S.A. Rolland, P. Mosbah, D.T. Gethin, R.W. Lewis

Powder Technology, 2012, 221, pp.123-136. ⟨10.1016/j.powtec.2011.12.044⟩. ⟨hal-00786891⟩

• Article dans une revue

Combinatorial approaches to understanding polytypism in III-V nanowires

J. Johansson, J. Bolinsson, M. Ek, P. Caroff, K.A. Dick

ACS Nano, 2012, 6, pp.6142-6149. ⟨10.1021/nn301477x⟩. ⟨hal-00786988⟩

• Article dans une revue

Intra-band gap in Lamb modes propagating in a periodic solid structure

J. Pierre, M. Renier, Bernard Bonello, Anne-Christine Hladky

Journal of Physics D: Applied Physics, 2012, 45, pp.185305-1-5. ⟨10.1088/0022-3727/45/18/185305⟩. ⟨hal-00786888⟩