Publications

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩

• Article dans une revue

Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study

V. Mortet, L. Zhang, M. Eckert, J. d'Haen, A. Soltani, M. Moreau, David Troadec, E. Neyts, Jean-Claude de Jaeger, J. Verbeeck, A. Bogaerts, G. van Tendeloo, K. Haenen, P. Wagner

Physica Status Solidi A (applications and materials science), 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩. ⟨hal-00788174⟩

• Article dans une revue

One decade microwave forward network analyzer based on the multi-port technique

Kamel Haddadi, T. Lasri

Progress In Electromagnetics Research C, 2012, 30, pp.105-118. ⟨hal-00788270⟩

• Article dans une revue

Affinity surface-assisted laser desorption/ionization mass spectrometry for peptide enrichment

Yannick Coffinier, N. Nguyen, H. Drobecq, O. Melnyk, V. Thomy, Rabah Boukherroub

Analyst, 2012, 137, pp.5527-5532. ⟨10.1039/C2AN35803D⟩. ⟨hal-00788306⟩

• Communication dans un congrès

Conjugated monomers and oligomers synthesised by metathesis route as active layer in organic field effect transistors

Nela Bejenaru, Kamal Lmimouni, H. Bejbouji, Dominique Vuillaume, Régis Gauvin, André Mortreux, Nicolas Cheval, Patrick Pale

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium J : Organic and Hybrid-Organic Electronics, 2012, San Francisco, CA, United States. ⟨hal-00797698⟩

• Article dans une revue

Effect of heterostructure design on current-voltage characteristics in AlxGa1-xN/GaN double-barriers resonant tunneling diode

Mohamed Boucherit, Ali Soltani, Michel Rousseau, J.L. Farvacque, Jean-Claude de Jaeger

Ballistic transport in double-barriers resonant tunneling diodes based on GaN is investigated in this work using the non-equilibrium Green's functions formalism. The electron density of states, the electrons concentration, and the current-voltage characteristics are calculated taking into…

Journal of Applied Physics, 2012, 112 (11), pp.114305. ⟨10.1063/1.4767382⟩. ⟨hal-00787875⟩

• Article dans une revue

Generalized interface models for transport phenomena : unusual scale effects in composite nanomaterials

F. Pavanello, F. Manca, Pier Luca Palla, S. Giordano

The effective transport properties of heterogeneous nanoscale materials and structures are affected by several geometrical and physical factors. Among them, the presence of imperfect interfaces plays a central role being often at the origin of the scale effects. To describe real contacts between…

Journal of Applied Physics, 2012, 112 (8), pp.084306. ⟨10.1063/1.4759017⟩. ⟨hal-00787479⟩

• Communication dans un congrès

Millimeter wave elastomeric antennas

S. Hage-Ali, Y. Orlic, Nicolas Tiercelin, Ronan Sauleau, Philippe Pernod, Vladimir Preobrazhensky, Philippe Coquet

Advanced Electromagnetics Symposium, AES 2012, Apr 2012, Paris, France. ⟨hal-00772979⟩

• Article dans une revue

Highly sensitive terahertz spectroscopy in microsystem

Simon Laurette, A. Treizebre, Adil Elagli, Basak Hatirnaz, Renato Froidevaux, Frederic Affouard, Ludovic Duponchel, Bertrand Bocquet

We herein present a microfluidic system dedicated to THz spectroscopy of aqueous solutions. This device is able to reach a state of the art sensitivity of 5 mg mL⁻¹, while requiring only small sample quantities and a low power source. Hydration of BSA, lysozyme and…

RSC Advances, 2012, RSC Advances, 2, pp.10064 - 10071. ⟨10.1039/C2RA21320F⟩. ⟨hal-00744914⟩