Publications

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen…

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩

• Article dans une revue

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

K. Pantzas, G. Patriarche, David Troadec, S. Gautier, T. Moudakir, S. Suresh, L. Largeau, O. Mauguin, P. L. Voss, A. Ougazzaden

Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how…

Nanotechnology, 2012, 23, pp.455707-455716. ⟨10.1088/0957-4484/23/45/455707⟩. ⟨hal-00747027⟩

• Communication dans un congrès

Narrow linewidth tunable THz signal radiated by 1.55 µm photomixing

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

THz has become a wide field of investigation opening new opportunities in a growing number of domains of physics, chemistry, and biology. Among the different techniques existing today to generate THz fields, heterodyning two optical frequencies is a useful approach when tunability is required.…

SPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications III, 2012, San Diego, CA, United States. pp.84960C-1-7, ⟨10.1117/12.929738⟩. ⟨hal-00803097⟩

• Article dans une revue

The vibration dipole : a time reversed acoustics scheme for the experimental localisation of surface breaking cracks

B. van Damme, K. van den Abeele, Olivier Bou Matar

Applied Physics Letters, 2012, 100, pp.084103-1-3. ⟨10.1063/1.3690043⟩. ⟨hal-00787355⟩

• Communication dans un congrès

In0.53Ga0.47As MOSFET with gate-first and gate-last process

J.J. Mo, Nicolas Wichmann, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩

• Communication dans un congrès

AlGaN/GaN based field effect transistors for terahertz detection and imaging

M. Sakowicz, M.B. Lifshits, O.A. Klimenko, D. Coquillat, N. Dyakonova, F. Teppe, Christophe Gaquière, M.A. Poisson, S. Delage, W. Knap

SPIE 2012 Photonics West, Gallium Nitride Materials and Devices VII, 2012, San Francisco, CA, United States. pp.82621V-1-5, ⟨10.1117/12.908236⟩. ⟨hal-00801202⟩

• Communication dans un congrès

Ventriloquism effect on distance auditory cues

N. Côté, V. Koehl, B. Paquier

11th Congrès Français d'Acoustique joint with 2012 Annual IOA Meeting, Acoustics 2012, 2012, Nantes, France. pp.1063-1067. ⟨hal-00801039⟩

• Article dans une revue

Impurity-limited mobility and variability in gate-all-around silicon nanowires

Y.M. Niquet, H. Mera, C. Delerue

Applied Physics Letters, 2012, 100, pp.153119-1-4. ⟨10.1063/1.4704174⟩. ⟨hal-00787840⟩

• Article dans une revue

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, Christophe Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart

Applied Physics Letters, 2012, 101, pp.142111-1-4. ⟨10.1063/1.4758292⟩. ⟨hal-00787025⟩

• Communication dans un congrès

100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩. ⟨hal-00801043⟩