Publications

• Article dans une revue

Acousto-optic couplings in two-dimensional phoxonic crystal cavities

Quentin Rolland, M. Oudich, Said El-Jallal, Samuel Dupont, Yan Pennec, Joseph Gazalet, Jean-Claude Kastelik, Gaëtan Lévêque, Bahram Djafari-Rouhani

Applied Physics Letters, 2012, 101, pp.061109-1-4. ⟨10.1063/1.4744539⟩. ⟨hal-00787416⟩

• Article dans une revue

Characterization of the state of a droplet on a micro-textured silicon wafer using ultrasound

N. Saad, Renaud Dufour, Pierre Campistron, Georges Nassar, Julien Carlier, Maxime Harnois, B. Merheb, Rabah Boukherroub, V. Senez, J. Gao, Vincent Thomy, M. Ajaka, Bertrand Nongaillard

In this work, we propose acoustic characterization as a new method to probe wetting states on a superhydrophobic surface. The analysis of the multiple reflections of a longitudinal acoustic wave from solid-liquid and solid-vapor interfaces enables to distinguish between the two well known Cassie-…

Journal of Applied Physics, 2012, 112 (10), pp.104908. ⟨10.1063/1.4767223⟩. ⟨hal-00788344⟩

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have…

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩

• Communication dans un congrès

Acousto-optic interaction in photonic and phononic crystals for improved efficiency

Quentin Rolland, Samuel Dupont, D. Yudistira, Joseph Gazalet, Jean-Claude Kastelik, Yan Pennec

5th International Symposium on Optronics in Defence and Security, OPTRO 2012, 2012, Paris, France. pp.Emerging Technologies II, S05_08, OPTRO-2012-095, 1-7. ⟨hal-00801112⟩

• Communication dans un congrès

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801047⟩

• Communication dans un congrès

Déplacement d'une goutte soumise à des ondes acoustique de surface (SAW) : étude de l'influence de la gravité sur le déplacement

Adrien Bussonnière, Michael Baudoin, Olivier Bou Matar

15èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, JNRDM 2012, 2012, Marseille, France. pp.1-4. ⟨hal-00806604⟩

• Communication dans un congrès

[Invited] The electro-magneto-elastic Eshelby tensor : applications to homogenization methods and nano-structures

S. Giordano, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky

Colloque National MECAMAT, 2012, Aussois, France. pp.1-13. ⟨hal-00806603⟩

• Communication dans un congrès

Holistic modelling of heterogeneous embedded systems with high multi-discipline feedback : application to a precollision mitigation braking system

A. Leveque, François Pecheux, M.M. Louerat, H. Aboushady, F. Cenni, S. Scotti, A. Massouri, Laurent Clavier

Design, Automation & Test in Europe, DATE 2012, 2012, Dresden, Germany. pp.739-744. ⟨hal-00801059⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs…

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩