Publications

• Article dans une revue

In situ silicon-integrated tuner for automated on-wafer mmW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, N. Waldhoff, D. Gloria, S. Boret, Gilles Dambrine

IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩. ⟨hal-00819467⟩

• Communication dans un congrès

Extraction entre 40 MHz et 67 GHz de la permittivité complexe du KTa 0.65Nb0.35O3 déposé en couche mince

Gregory Houzet, Thierry Lacrevaz, Cédric Bermond, Arnaud Le Febvrier, Stephanie Deputier, Maryline Guilloux-Viry, Karine Blary, B. Fléchet

12e Journées Caractérisation Microondes et Matériaux,, Mar 2012, Chambéry, France. ⟨hal-01068623⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this…

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-…

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Article dans une revue

In-line dynamic acoustic behavior of a viscoelastic complex media : dough application

Georges Nassar, Bertrand Nongaillard, J. Cheio

Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩

• Article dans une revue

[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩

• Article dans une revue

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩

• Article dans une revue

Combinatorial approaches to understanding polytypism in III-V nanowires

J. Johansson, J. Bolinsson, M. Ek, P. Caroff, K.A. Dick

ACS Nano, 2012, 6, pp.6142-6149. ⟨10.1021/nn301477x⟩. ⟨hal-00786988⟩

• Article dans une revue

First demonstration of high-power GaN-on-silicon transistors at 40 GHz

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage…

IEEE Electron Device Letters, 2012, 33 (8), pp.1168-1170. ⟨10.1109/LED.2012.2198192⟩. ⟨hal-00786912⟩