Publications

• Communication dans un congrès

[Invited] Terahertz near field microscopy

Tahsin Akalin

3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2012, 2012, Paris, France. ⟨hal-00798872⟩

• Communication dans un congrès

Analysis of surface charging effects in passivated AlGaN/GaN HEMTs

M. Gassoumi, H. Mosbahi, B. Grimbert, Christophe Gaquière, H. Maaref

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium Q : Novel materials and fabrication methods for new emerging devices, 2012, Strasbourg, France. ⟨hal-00798219⟩

• Communication dans un congrès

Dielectrophoretic displacement of /cryptosporidium/oocysts : concentration and segregation of organisms

R. Lejard, J. Follet, A. Follet, V. Senez

IV International Giardia and Cryptosporidium Conference, IV IGCC, 2012, Wellington, New Zealand. ⟨hal-00798247⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Article dans une revue

Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

We investigate the influence of the Sb flux on the growth of GaSb islands on a highly mismatched (001) GaP substrate. Between low and medium Sb flux values, standard kinetics drives the GaSb island formation and their relaxation is progressively favored by 90° misfit dislocations at the GaSb/GaP…

Journal of Applied Physics, 2012, 111 (12), pp.123506. ⟨10.1063/1.4729548⟩. ⟨hal-00786989⟩

• Communication dans un congrès

Stability of signals generated with a dual-frequency laser and a UTC photodiode up to 700 GHz

Joachim Börner, Guillaume Pillet, Loïc Morvan, Daniel Dolfi, Alexandre Beck, Philipp Latzel, Fabio Pavanello, Guillaume Ducournau, Jean-Francois Lampin

Low phase noise and tunable THz-signals from 300 GHz to 1 THz are obtained with a combination of a unitravelling carrier photodiode and a solid-state dual-frequency laser at 1.5 μm. The spectral purity is precisely characterized. Phase noises as low as -20 dBc/Hz at 1 kHz offset from the carrier…

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380084⟩. ⟨hal-00803100⟩

• Communication dans un congrès

Photo-modulated field emission of carbon nanotubes cold cathodes

F. Andrianiazy, J.P. Mazellier, L . Gangloff, P. Legagneux, P. Ponnard, N. Martinez, C . Bourat, X.L. Han, Jean-Francois Lampin

25th International Vacuum Nanoelectronics Conference, IVNC 2012, 2012, Jeju, South Korea. pp.46-49, ⟨10.1109/IVNC.2012.6316834⟩. ⟨hal-00803103⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

THz metamaterials and metasurfaces

Gabriel Moreno, Haian Sebai, Serkan Kaya, Abbas Ghaddar, Abdallah Chahadih, Ibrahim Türer, Mokhtar Zehar, Guillaume Ducournau, Jean-Francois Lampin, Renaud Leturcq, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820996⟩