Publications

• Communication dans un congrès

State of the art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, Christophe Gaquière

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259409⟩. ⟨hal-00801191⟩

• Article dans une revue

Band gap tunability of magneto-elastic phononic crystal

Olivier Bou Matar, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier, Philippe Pernod, Vladimir Preobrazhensky

The possibility of control and tuning of the band structures of phononic crystals offered by the introduction of an active magnetoelastic material and the application of an external magnetic field is studied. Two means to obtain large elastic properties variations in magnetoelastic material are…

Journal of Applied Physics, 2012, 111 (5), pp.054901. ⟨10.1063/1.3687928⟩. ⟨hal-00787018⟩

• Article dans une revue

Physical aspects of low power synapses based on phase change memory devices

M. Suri, O. Bichler, D. Querlioz, B. Traore, O. Cueto, L. Perniola, V. Sousa, D. Vuillaume, C. Gamrat, B. de Salvo

In this work, we demonstrate how phase change memory (PCM) devices can be used to emulate biologically inspired synaptic functions in particular, potentiation and depression, important for implementing neuromorphic hardware. PCM devices with different chalcogenide materials are fabricated and…

Journal of Applied Physics, 2012, 112 (5), pp.054904. ⟨10.1063/1.4749411⟩. ⟨hal-00787372⟩

• Communication dans un congrès

Effect of phonon confinement on the dispersion relation and heat capacity in nanoscale Si membranes

J. Cuffe, E. Chávez, A. Shchepetov, P.O. Chapuis, E.H. El Boudouti, F. Alzina, Yan Pennec, Bahram Djafari-Rouhani, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The effect of confinement on the acoustic phonon dispersion relation and heat capacity in free-standing silicon membranes is investigated, with thickness values down ∼ 8 nm. The discrete phonon branches are observed by angle-resolved inelastic light scattering spectroscopy. The fundamental flexural…

ASME 2012 International Mechanical Engineering Congress and Exposition, Symposium on Phononic Crystals and Acoustic Metamaterials, Nov 2012, Houston, United States. pp.1081-1088, ⟨10.1115/IMECE2012-87635⟩. ⟨hal-00911369⟩

• Communication dans un congrès

Kinetics of N2(B3Πg) and N2(C3Πu) states in N2-Ar discharges sustained by a RF helical coupling device

Corinne Foissac, Jaroslav Krištof, Adriana Annusova, Pavel Veis, Philippe Supiot

A kinetic model is discussed for the two main emitting species (N2(B), N2(C)) of a N2-Ar plasma excited at 27 MHz by a helical cavity with operating pressure of 200 Pa. The present paper consistently illustrates, for miscellaneous Ar fractions and different positions, the great influence of the…

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal. paper P1.1.9, 1-2. ⟨hal-00802620⟩

• Communication dans un congrès

A set of predictive tools to diagnosis reconstitution and ageing behaviour of dairy powders

Bruno Richard, Ousmane Syll, Malika Toubal, Jean-Francois Le Page, Georges Nassar, Edouard Radziszewski, Bertrand Nongaillard, Pascal Debreyne, Pierre Schuck, Romain Jeantet, Guillaume Delaplace

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World Dairy Summit 2012, Nov 2012, Cap Town, South Africa. ⟨hal-01209367⟩

• Communication dans un congrès

Dielectric Parameters Study of insulation Wire Free of Volatile Organic Compound

S. Ait Amar, D. Roger, G. Velu, M. Ben Fatallah, A. Habas, J.-P. Habas, P. Notingher, P. Frezel

IEEE Annual Conf. on El. Insulation and Diel. Phenomena CEIDP, 2012, Montréal, Canada. ⟨hal-01882817⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Article dans une revue

Low power sessile droplets actuation via modulated surface acoustic waves

Michael Baudoin, Philippe Brunet, Olivier Bou Matar, Etienne Herth

Low power actuation of sessile droplets is of primary interest for portable or hybrid lab-on-a-chip and harmless manipulation of biofluids. In this paper, we show that the acoustic power required to move or deform droplets via surface acoustic waves can be substantially reduced through the forcing…

Applied Physics Letters, 2012, 100, pp.154102-1-4. ⟨10.1063/1.3701725⟩. ⟨hal-00787356⟩