Publications

• Communication dans un congrès

Influence of Sb overpressure on the anisotropic transport properties of InAs/AlSb heterostructures grown on highly mismatched substrates

S. El Kazzi, L. Desplanque, Y. Wang, P. Ruterana, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium G : Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II, 2012, San Francisco, CA, United States. ⟨hal-00797368⟩

• Communication dans un congrès

Nucleation mechanisms of self-catalyzed nanowires on silicon

E. Russo-Averchi, J. Arbiol, E. Uccelli, P. Krogstrup, S. Conesa-Boj, A. Dalmau I Mallorqui, M. Heiss, D. Ruffer, J. Nygard, J.R. Morante, P. Caroff, A. Fontcuberta I Morral

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797370⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

Growth kinetic studies of graphene on Cu foils

E. Pichonat, R. Fleurier, D. Vignaud, H. Happy

IEEE Topical Symposium on RF Nanotechnology, Asia-Pacific EMC Week, APEMC 2012, 2012, Sentosa Island, Singapore. ⟨hal-00815030⟩

• Communication dans un congrès

Magnetostatic micro-actuator based on ultrasoft elastomeric membrane and copper-permalloy electrodeposited structures

Jérémy Streque, Abdelkrim Talbi, Clément Bonnerot, Philippe Pernod, Vladimir Preobrazhensky

This paper presents different designs of magnetostatic micro-actuators, based on both conventional and integrated micro-coils. A 3-dimensional magnetic circuit made of Permalloy is proposed in order to improve their efficiency. The mobile parts of the micro-actuators are made of ultrasoft…

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.1157-1160, ⟨10.1109/MEMSYS.2012.6170368⟩. ⟨hal-00801090⟩

• Communication dans un congrès

THz metamaterials and metasurfaces

Gabriel Moreno, Haian Sebai, Serkan Kaya, Abbas Ghaddar, Abdallah Chahadih, Ibrahim Türer, Mokhtar Zehar, Guillaume Ducournau, Jean-Francois Lampin, Renaud Leturcq, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820996⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Article dans une revue

Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

We investigate the influence of the Sb flux on the growth of GaSb islands on a highly mismatched (001) GaP substrate. Between low and medium Sb flux values, standard kinetics drives the GaSb island formation and their relaxation is progressively favored by 90° misfit dislocations at the GaSb/GaP…

Journal of Applied Physics, 2012, 111 (12), pp.123506. ⟨10.1063/1.4729548⟩. ⟨hal-00786989⟩

• Communication dans un congrès

Stability of signals generated with a dual-frequency laser and a UTC photodiode up to 700 GHz

Joachim Börner, Guillaume Pillet, Loïc Morvan, Daniel Dolfi, Alexandre Beck, Philipp Latzel, Fabio Pavanello, Guillaume Ducournau, Jean-Francois Lampin

Low phase noise and tunable THz-signals from 300 GHz to 1 THz are obtained with a combination of a unitravelling carrier photodiode and a solid-state dual-frequency laser at 1.5 μm. The spectral purity is precisely characterized. Phase noises as low as -20 dBc/Hz at 1 kHz offset from the carrier…

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380084⟩. ⟨hal-00803100⟩