Publications

Affichage de 8541 à 8550 sur 16109


  • Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

  • Autre publication scientifique

Design and optimization of surface plasmon resonance (SPR) biosensors

Edy Wijaya

2012. ⟨hal-00799301⟩

  • Communication dans un congrès

THz metamaterials and metasurfaces

Gabriel Moreno, Haian Sebai, Serkan Kaya, Abbas Ghaddar, Abdallah Chahadih, Ibrahim Türer, Mokhtar Zehar, Guillaume Ducournau, Jean-Francois Lampin, Renaud Leturcq, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820996⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 1/1]

Raffaele Pisano

2012. ⟨hal-04511057⟩

  • Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

  • Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

  • Article dans une revue

Wood anomaly transmission enhancement in fishnet-based metamaterials at terahertz frequencies

N. Soltani, Eric Lheurette, D. Lippens

Journal of Applied Physics, 2012, 112, pp.124509-1-8. ⟨10.1063/1.4769744⟩. ⟨hal-00786993⟩

  • Communication dans un congrès

Quick estimation of the fundamental resonance of an aircraft exposed to HPEM with hybrid method

Samuel Leman, Alain Reineix, Madjid Mahmoudi, Yannick Poire, Frédéric Hoëppe, Bernard Démoulin

European electromagnetics, EuroEM 2012, Jul 2012, Toulouse, France. pp.Inconnu. ⟨hal-00780612⟩

  • Article dans une revue

Energy harvesting process modelling of an aeronautical structural health monitoring system using a bond-graph approach

Thomas Sainthuile, Sébastien Grondel, Christophe Delebarre, Stéphane Godts, Christophe Paget

International Journal of Aerospace Sciences, 2012, 1, pp.107-115. ⟨10.5923/j.aerospace.20120105.03⟩. ⟨hal-00790361⟩