Publications

• Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

• Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• Brevet

Microsystème de génération d'un jet synthétique, procédé de fabrication et dispositif de contrôle d'écoulement correspondants

L. Gimeno-Monge, Abdelkrim Talbi, Philippe Pernod, A. Merlen, Vladimir Preobrazhensky, R. Viard

N° de brevet: FR2947813 (A1). 2011. ⟨hal-00559182⟩

• Autre publication scientifique

Fabrication et caractérisation de transistor à base de graphène nano ruban en vue d'application haute fréquence

Nan Meng

2011. ⟨hal-00574524⟩

• Article dans une revue

A 45° silicon mirror for acoustic propagation parallel to the plane of the substrate

S. Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Assane Ndieguene, X. Zhao

The interest of a thin silicon oxide layer on a {110} silicon crystal planes used as 45° acoustical mirrors for reflection has been demonstrated. Passive mirror-like planes (groove depth ∼ 150 μm) were fabricated by wet chemical etching of (100) silicon. High frequency acoustical longitudinal waves…

Journal of Physics: Conference Series, 2011, 269, pp.012009-1-10. ⟨10.1088/1742-6596/269/1/012009⟩. ⟨hal-00572671⟩

• Communication dans un congrès

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher, Yvon Cordier, Fabrice Semond, Virginie Brandli, Bertrand Grimbert, Achraf Ben Amar, Matthieu Werquin, Christophe Boyaval, Christophe Gaquière, Didier Theron, Lionel Buchaillot

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as…

24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩. ⟨hal-00579046⟩

• Communication dans un congrès

Optimal design of non intuitive compliant microgripper with high resolution

A. Grira, Bernard Legrand, C. Rotinat-Libersa, E. Mairiaux, L. Buchaillot

IEEE/RSJ International Conference on Intelligent Robots and Systems, IROS 2011, 2011, San Francisco, CA, United States. pp.45-50, ⟨10.1109/IROS.2011.6048665⟩. ⟨hal-00800034⟩

• Article dans une revue

Poole-Frenkel assisted emissions from a barrier trap in AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, M.A. Zaidi, H. Maaref

Journal of Electron Devices, 2011, 11, pp.538-543. ⟨hal-00639919⟩

• Article dans une revue

Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.104101-1-3. ⟨10.1143/APEX.4.104101⟩. ⟨hal-00639827⟩

• Communication dans un congrès

Electrically tunable metamaterials operating under normal incidences

F. Zhang, Q. Zhao, J.B. Sun, W.H. Zhang, J. Zhou, D. Lippens

30th Progress in Electromagnetics Research Symposium, PIERS 2011, 2011, Suzhou, China. ⟨hal-00807133⟩