Publications

• Autre publication scientifique

Développement d'un outil de caractérisation millimétrique de bruit dans la bande de fréquences 110-320 GHz

Laurent Poulain

2012. ⟨hal-00799267⟩

• Communication dans un congrès

Room temperature process for direct writing of nanostructures on plastic

V. Passi, A. Lecavelier Des Etangs-Levallois, Z.K. Chen, François Morini, Emmanuel Dubois

38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797783⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Holistic modelling of heterogeneous embedded systems with high multi-discipline feedback : application to a precollision mitigation braking system

A. Leveque, François Pecheux, M.M. Louerat, H. Aboushady, F. Cenni, S. Scotti, A. Massouri, Laurent Clavier

Design, Automation & Test in Europe, DATE 2012, 2012, Dresden, Germany. pp.739-744. ⟨hal-00801059⟩

• Communication dans un congrès

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs…

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩

• Communication dans un congrès

Fabrication, characterization and analysis of AlN thin films grown on HR-silicon by MBE and PVD methods

N. Defrance, Marie Lesecq, F. Lecourt, Virginie Hoel, Jean-Claude de Jaeger

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801190⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Evaluación experimental de la técnica time-reversal para sistemas de gran ancho de banda en túneles

Concepcion Garcia Pardo, M. Lienard, Pierre Degauque, Jose Maria Molina Garcia-Pardo, Leandro Juan Llacer

XXVII Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2012, 2012, Elche, España. pp.75-77. ⟨hal-00994829⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩