Publications

• Communication dans un congrès

A crown-ether-derivatized oligothiophene doubly attached on gold surface as cation-binding electrical switchable molecular junction

K. Smaali, S. Lenfant, S. Godey, D. Vuillaume, T.K. Tran, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, J. Roncali, Christophe Krzeminski, F. Cleri, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797674⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩

• Communication dans un congrès

GaInSb nanowires grown by MOVPE

S. Gorji Ghalamestani, M. Ek, P. Caroff, K.A. Dick

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797374⟩

• Communication dans un congrès

Fabrication de composants passifs par impression jet d'encre - Caractérisation RF

W. Wei, Thomas Dargent, Virginie Hoel, H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797331⟩

• Communication dans un congrès

Effect of nitrogen on the optical and structural properties of dilute GaInNAs double quantum wells grown by MBE on (100), (311)A and (311)B GaAs substrates

A. Khatab, M. Henini, G. Patriarche, David Troadec, M. Sadeghi, S. Wang

17th International Conference on Molecular Beam Epitaxy, MBE 2012, 2012, Nara, Japan. ⟨hal-00798220⟩

• Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

• Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the…

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩