Publications
Affichage de 8651 à 8660 sur 16556
A 60 GHz transceiver for low power ad hoc networks
Christophe Loyez, N. Rolland, Michael Bocquet
IEEE International Conference on Green Computing and Communications, GreenCom 2012, Workshop on Energy and Wireless Sensors, e-WiSe 2012, 2012, Besançon, France. pp.session 2 : Power Management, 671-674, ⟨10.1109/GreenCom.2012.108⟩. ⟨hal-00811708⟩
A 10GBits/s 2.1pJ/bit OOK demodulator at 60GHz for wireless chip-to-chip communication
S. Foulon, S. Pruvost, Christophe Loyez, N. Rolland, Vanessa Avramovic
IEEE Radio and Wireless Symposium, RWS 2012, 2012, Santa Clara, CA, United States. pp.291-294, ⟨10.1109/RWS.2012.6175320⟩. ⟨hal-00801068⟩
Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires
Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau
Tight-binding calculations of the optical properties of HgTe nanocrystals
Guy Allan, Christophe Delerue
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩
Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal
Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩
Supercritical dynamics of magnetoelastic wave triad in a solid
Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky
Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩
Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer
J.G. Kim, S. Seok, N. Rolland, P.A. Rolland
International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩
The effect of gate length variation on InAlGaN/GaN HFET device characteristics
N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan
Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩
High power density performances of SiGe HBT from BiCMOS technology at W-band
A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière
IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩
Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study
V. Mortet, L. Zhang, M. Eckert, J. d'Haen, A. Soltani, M. Moreau, David Troadec, E. Neyts, Jean-Claude de Jaeger, J. Verbeeck, A. Bogaerts, G. van Tendeloo, K. Haenen, P. Wagner
Physica Status Solidi A (applications and materials science), 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩. ⟨hal-00788174⟩