Publications

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage…

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• Article dans une revue

Conduction degradation in anisotropic multi-cracked materials

S. Giordano, Pier Luca Palla

The European Physical Journal B: Condensed Matter and Complex Systems, 2012, 85, pp.59-1-15. ⟨10.1140/epjb/e2011-20814-5⟩. ⟨hal-00787354⟩

• Article dans une revue

Erratum: ''Enhanced directional optical transmission'' [Appl. Phys. Lett. 93, 043114 (2008)]

L. Dobrzynski, Abdellatif Akjouj

Applied Physics Letters, 2012, 101, pp.149901-1. ⟨10.1063/1.4756784⟩. ⟨hal-00787476⟩

• Article dans une revue

MEMS ring resonators for laserless AFM with sub-nanoNewton force resolution

Emmanuelle Algre, Zhuang Xiong, Marc Faucher, Benjamin Walter, Lionel Buchaillot, Bernard Legrand

A concept of atomic force microscopy (AFM) oscillating sensors using electromechanical silicon microresonators is presented, and imaging capabilities are demonstrated. The microresonators are designed to feature MHz resonance frequencies, and they are batch fabricated using standard silicon…

Journal of Microelectromechanical Systems, 2012, 21, pp.385-397. ⟨10.1109/JMEMS.2011.2179012⟩. ⟨hal-00787407⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩

• Communication dans un congrès

A crown-ether-derivatized oligothiophene doubly attached on gold surface as cation-binding electrical switchable molecular junction

K. Smaali, S. Lenfant, S. Godey, D. Vuillaume, T.K. Tran, M. Hardouin, Q. Bricaud, M. Oçafrain, P. Blanchard, J. Roncali, Christophe Krzeminski, F. Cleri, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797674⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩

• Communication dans un congrès

GaInSb nanowires grown by MOVPE

S. Gorji Ghalamestani, M. Ek, P. Caroff, K.A. Dick

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797374⟩

• Communication dans un congrès

Fabrication de composants passifs par impression jet d'encre - Caractérisation RF

W. Wei, Thomas Dargent, Virginie Hoel, H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797331⟩