Publications

• Communication dans un congrès

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs…

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩

• Communication dans un congrès

Fabrication, characterization and analysis of AlN thin films grown on HR-silicon by MBE and PVD methods

N. Defrance, Marie Lesecq, F. Lecourt, Virginie Hoel, Jean-Claude de Jaeger

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801190⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Evaluación experimental de la técnica time-reversal para sistemas de gran ancho de banda en túneles

Concepcion Garcia Pardo, M. Lienard, Pierre Degauque, Jose Maria Molina Garcia-Pardo, Leandro Juan Llacer

XXVII Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2012, 2012, Elche, España. pp.75-77. ⟨hal-00994829⟩

• Article dans une revue

Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

Etienne Herth, Emmanuelle Algre, Pascal Tilmant, Martin François, Christophe Boyaval, Bernard Legrand

We present electron-beam lithography results on an AznLOF2020 UV negative tone resist. This study aims to define electron-beam lithography parameters compatible with microelectromechanical systems/nanoelectromechanical systems fabrication. Usually, one of the properties of the resist material is…

IEEE Transactions on Nanotechnology, 2012, 11 (4), pp.854-859. ⟨10.1109/TNANO.2012.2196802⟩. ⟨hal-00787415⟩

• Communication dans un congrès

A direct conversion IQ modulator in CMOS 65 nm SOI for multi-gigabit 60 GHz systems

Christophe Loyez, A. Siligaris, P. Vincent, A. Cathelin, N. Rolland

7th European Microwave Integrated Circuits Conference, EuMIC 2012, 2012, Amsterdam, Netherlands. pp.5-7. ⟨hal-00814970⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Communication dans un congrès

The thermal effect on the output conductance in AlGaN/GaN HEMT's

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

24th International Conference on Microelectronics, ICM 2012, 2012, Algiers, Algeria. pp.1-4, ⟨10.1109/ICM.2012.6471365⟩. ⟨hal-00814968⟩

• Article dans une revue

Enhancement of bonding strength of packaging based on BCB bonding for RF devices

S. Seok, M. Fryziel, N. Rolland, P.A. Rolland

Microsystem Technologies, 2012, 18, pp.2035-2039. ⟨10.1007/s00542-012-1530-0⟩. ⟨hal-00786909⟩

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage…

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩