Publications

• Communication dans un congrès

Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩

• Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode

X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang

Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩

• Article dans une revue

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink

Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩

• Article dans une revue

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

T. Xu, K.A. Dick, S.R. Plissard, T.H. Nguyen, Y. Makoudi, Maxime Berthe, J.P. Nys, X. Wallart, B. Grandidier, P. Caroff

Nanotechnology, 2012, 23, pp.095702-1-9. ⟨10.1088/0957-4484/23/9/095702⟩. ⟨hal-00787477⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Communication dans un congrès

Atomistic calculations of the mobility in ultimate Si (Ge) nanowires and carbon nanotubes

Y.M. Niquet, J. Li, V.H. Nguyen, F. Triozon, W. Zhang, Christophe Krzeminski, L. Genovese, D. Rideau, C. Delerue

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797753⟩

• Communication dans un congrès

Fabrication de composants passifs par impression jet d'encre - Caractérisation RF

W. Wei, Thomas Dargent, Virginie Hoel, H. Happy

12èmes Journées Pédagogiques CNFM, 2012, Saint Malo, France. ⟨hal-00797331⟩

• Communication dans un congrès

InAs hot electron transistors with cutoff frequency above 200 GHz

H. Nguyen Van, A. N. Baranov, R. Teissier, M. Zaknoune

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. ⟨hal-00797314⟩

• Communication dans un congrès

Terahertz negative index material based on fishnet-like metamaterial

N. Soltani, Eric Lheurette, D. Lippens, F. Garet, J.L. Coutaz

3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2012, 2012, Paris, France. ⟨hal-00797339⟩

• Communication dans un congrès

[Invited] Graphene material for RF devices on flexible substrate

H. Happy

European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, 2012, Amsterdam, Netherlands. ⟨hal-00797279⟩