Publications

• Communication dans un congrès

Optimization of electrodes design for PZT thin-film actuated membranes

F. Casset, H. Michaud, T. Ricart, G. Le Rhun, M. Cueff, J. Abergel, P. Ancey, D. Faralli, Arnaud Devos, S. Fanget, E. Defay

This paper reports on the optimization of electrodes design for sol-gel Pb(Zr0.52, Ti0.48)O3 (PZT) thin-film actuated-membranes. PZT can be used in many actuator applications such as micro mirror, RF MEMS, inkjet or loudspeaker due to its strong piezoelectric properties. We aim to design membrane-…

26th European Conference on Solid-State Transducers, Eurosensors XXVI, Sep 2012, Kraków, Poland. pp.108-111, ⟨10.1016/j.proeng.2012.09.096⟩. ⟨hal-00801141⟩

• Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• Communication dans un congrès

DNA origami imaging with 10.9 MHz AFM MEMS probes

B. Walter, E. Mairiaux, Z. Xiong, M. Faucher, L. Buchaillot, Bernard Legrand

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.555-558, ⟨10.1109/MEMSYS.2012.6170236⟩. ⟨hal-00801107⟩

• Communication dans un congrès

Wafer-level BCB cap packaging of integrated MEMS switches with MMIC

S. Seok, J.G. Kim, M. Fryziel, N. Rolland, P.A. Rolland, H. Maher, W. Simon, R. Baggen

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258270⟩. ⟨hal-00801069⟩

• Communication dans un congrès

MEMS-4-MMIC : the next step in combined GaAs MEMS-MMIC technology

L. Baggen, W. Simon, R. Malmqvist, T. Vaha-Heikkila, H. Maher, S. Seok

15th International Symposium on Antenna Technology and Applied Electromagnetics, ANTEM 2012, 2012, Toulouse, France. pp.1-5, ⟨10.1109/ANTEM.2012.6262342⟩. ⟨hal-00801060⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩