Publications

• Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

• Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

• Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

• Communication dans un congrès

Organic synapstor for neuro-inspired circuits

F. Alibart, S. Pleutin, David Guérin, O. Bichler, C. Gamrat, D. Vuillaume

Matériaux et Nanostructures π-Conjugués, MNPC 11, 2011, Oberani, France. ⟨hal-00807727⟩

• Communication dans un congrès

Comparison of the tunability performances and loss factor up to 60 GHz of some ferroelectric materials : BST and doped BST, PST, hetero structures BST/BZN

Denis Remiens, Freddy Ponchel, Jean-François Legier, Caroline Soyer, T. Lasri, L. Yang, X.L. Lei, Gang Wang, X. Dong

Joint 20th IEEE International Symposium on Applications of Ferroelectrics and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF-PFM-2011, 2011, Vancouver, Canada. ⟨hal-00807661⟩

• Communication dans un congrès

Digital microfluidic on superhydrophobic surfaces for high sensitive mass spectrometry analysis

F. Lapierre, G. Piret, H. Drobecq, O. Melnyk, Yannick Coffinier, V. Thomy, Rabah Boukherroub

CSIRO Advanced Materials Conference, 2011, Melbourne, Victoria, Australia. ⟨hal-00807649⟩

• Communication dans un congrès

[Invited] THz BioMEMS for biological interaction studies

Bertrand Bocquet

4ème Colloque du Laboratoire International Associé en Nanotechnologies et Nanosystèmes, 2011, Allevard-Les-Bains, France. ⟨hal-00807639⟩

• Communication dans un congrès

[Invited] Monte Carlo simulation of quantum cascade lasers

Jean-Luc Thobel

IV Workshop on Physics and Technology of Semiconductor Lasers, 2011, Kazimierz Dolny, Poland. ⟨hal-00807622⟩

• Communication dans un congrès

Influence de l'eau sur les propriétés électroniques de jonctions moléculaires sur silicium

N. Clement, S. Pleutin, David Guérin, D. Vuillaume

Matériaux et Nanostructures π-Conjugués, MNPC 11, 2011, Obernai, France. ⟨hal-00807726⟩

• Communication dans un congrès

Novel AlGaN/GaN electronic nano-devices : application for sub-terahertz waves detection

P.A.D. Sangare, Guillaume Ducournau, B. Grimbert, M. Faucher, Christophe Gaquière

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807612⟩