Publications

• Article dans une revue

Enhancement of bonding strength of packaging based on BCB bonding for RF devices

S. Seok, M. Fryziel, N. Rolland, P.A. Rolland

Microsystem Technologies, 2012, 18, pp.2035-2039. ⟨10.1007/s00542-012-1530-0⟩. ⟨hal-00786909⟩

• Article dans une revue

Enhanced transmission via a sub-wavelength hole aperture coupled to a high-permittivity resonator

Véronique Sadaune, L. Kang, D. Lippens

Journal of Physics D: Applied Physics, 2012, 45, pp.475102-1-6. ⟨10.1088/0022-3727/45/47/475102⟩. ⟨hal-00786959⟩

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage…

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• Article dans une revue

Conduction degradation in anisotropic multi-cracked materials

S. Giordano, Pier Luca Palla

The European Physical Journal B: Condensed Matter and Complex Systems, 2012, 85, pp.59-1-15. ⟨10.1140/epjb/e2011-20814-5⟩. ⟨hal-00787354⟩

• Article dans une revue

Erratum: ''Enhanced directional optical transmission'' [Appl. Phys. Lett. 93, 043114 (2008)]

L. Dobrzynski, Abdellatif Akjouj

Applied Physics Letters, 2012, 101, pp.149901-1. ⟨10.1063/1.4756784⟩. ⟨hal-00787476⟩

• Article dans une revue

MEMS ring resonators for laserless AFM with sub-nanoNewton force resolution

Emmanuelle Algre, Zhuang Xiong, Marc Faucher, Benjamin Walter, Lionel Buchaillot, Bernard Legrand

A concept of atomic force microscopy (AFM) oscillating sensors using electromechanical silicon microresonators is presented, and imaging capabilities are demonstrated. The microresonators are designed to feature MHz resonance frequencies, and they are batch fabricated using standard silicon…

Journal of Microelectromechanical Systems, 2012, 21, pp.385-397. ⟨10.1109/JMEMS.2011.2179012⟩. ⟨hal-00787407⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩

• Communication dans un congrès

General solutions to the mechanical contact problem

Vladislav Aleshin, Koen van den Abeele, Olivier Bou Matar

A theory for mechanical contact of solids with friction is developed for a wide range of contacting profiles and loading histories. The starting point of the approach is the normal load-displacement dependency that can be obtained via analytical solutions for regular e.g. axisymmetric profiles and…

XVII International Conference on Nonlinear Elasticity in Materials, ICNEM 2012, Jul 2012, Cefalu, Sicily, Italy. pp.045012-1-11, ⟨10.1121/1.4764476⟩. ⟨hal-00819455⟩

• Communication dans un congrès

Terahertz negative index material based on fishnet-like metamaterial

N. Soltani, Eric Lheurette, D. Lippens, F. Garet, J.L. Coutaz

3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2012, 2012, Paris, France. ⟨hal-00797339⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the…

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩