Publications

Affichage de 8761 à 8770 sur 16309


  • Communication dans un congrès

Stability of signals generated with a dual-frequency laser and a UTC photodiode up to 700 GHz

Joachim Börner, Guillaume Pillet, Loïc Morvan, Daniel Dolfi, Alexandre Beck, Philipp Latzel, Fabio Pavanello, Guillaume Ducournau, Jean-Francois Lampin

Low phase noise and tunable THz-signals from 300 GHz to 1 THz are obtained with a combination of a unitravelling carrier photodiode and a solid-state dual-frequency laser at 1.5 μm. The spectral purity is precisely characterized. Phase noises as low as -20 dBc/Hz at 1 kHz offset from the carrier…

37th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2012, Sep 2012, Wollongong, Australia. pp.1-2, ⟨10.1109/IRMMW-THz.2012.6380084⟩. ⟨hal-00803100⟩

  • Communication dans un congrès

Photo-modulated field emission of carbon nanotubes cold cathodes

F. Andrianiazy, J.P. Mazellier, L . Gangloff, P. Legagneux, P. Ponnard, N. Martinez, C . Bourat, X.L. Han, Jean-Francois Lampin

25th International Vacuum Nanoelectronics Conference, IVNC 2012, 2012, Jeju, South Korea. pp.46-49, ⟨10.1109/IVNC.2012.6316834⟩. ⟨hal-00803103⟩

  • Communication dans un congrès

Third-order complex amplitudes tracking loop for slow fading channel estimation

H.Q. Shu, L. Ros, E.P. Simon

19th International Conference on Telecommunications, ICT 2012, 2012, Jounieh, Lebanon. pp.1-6, ⟨10.1109/ICTEL.2012.6221221⟩. ⟨hal-00802585⟩

  • Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

  • Communication dans un congrès

Growth kinetic studies of graphene on Cu foils

E. Pichonat, R. Fleurier, D. Vignaud, H. Happy

IEEE Topical Symposium on RF Nanotechnology, Asia-Pacific EMC Week, APEMC 2012, 2012, Sentosa Island, Singapore. ⟨hal-00815030⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 1/1]

Raffaele Pisano

2012. ⟨hal-04511057⟩

  • Article dans une revue

Elastic behaviour of inhomogeneities with size and shape different from their hosting cavities

S. Giordano, Pier Luca Palla, E. Cadelano, M. Brun

Mechanics of Materials, 2012, 44, pp.4-22. ⟨10.1016/j.mechmat.2011.07.015⟩. ⟨hal-00639826⟩

  • Communication dans un congrès

Magnetostatic micro-actuator based on ultrasoft elastomeric membrane and copper-permalloy electrodeposited structures

Jérémy Streque, Abdelkrim Talbi, Clément Bonnerot, Philippe Pernod, Vladimir Preobrazhensky

This paper presents different designs of magnetostatic micro-actuators, based on both conventional and integrated micro-coils. A 3-dimensional magnetic circuit made of Permalloy is proposed in order to improve their efficiency. The mobile parts of the micro-actuators are made of ultrasoft…

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.1157-1160, ⟨10.1109/MEMSYS.2012.6170368⟩. ⟨hal-00801090⟩

  • Article dans une revue

Demonstration of defect-free and composition tunable GaxIn1-xSb nanowires

S. Gorji Ghalamestani, M. Ek, B. Ganjipour, C. Thelander, J. Johansson, P. Caroff, K.A. Dick

Nano Letters, 2012, 12, pp.4914-4919. ⟨10.1021/nl302497r⟩. ⟨hal-00786991⟩