Publications

• Article dans une revue

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

S. Galambosi, L. Wirtz, J.A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hamalainen

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), pp.081413. ⟨10.1103/PhysRevB.83.081413⟩. ⟨hal-00579067⟩

• Communication dans un congrès

Silicon High Frequency Test Structures Improvement for Millimeter Wave Varactors Characterization Optimization and Modeling

F. Sonnerat, R. Debroucke, Y. Morandini, D. Gloria, Jean-Daniel Arnould

Silicon High Frequency Test Structures Improvement for Millimeter Wave Varactors Characterization Optimization and Modeling". IEEE International Conference on Microelectronic Test Structures (ICMTS), Apr 2011, Amsterdam, Netherlands. ⟨hal-01068863⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Proceedings/Recueil des communications

Physics–Mathematics Relationship. Historical and Epistemological notes

Raffaele Pisano

Proceedings of the ESU 6 European Summer University History And Epistemology In Mathematics, Verlag Holzhausen GmbH–Holzhausen Publishing Ltd, pp.457-452, 2011, 978-3-85493-206-2. ⟨hal-04513891⟩

• Communication dans un congrès

Development of elastic super-lenses made of phononic crystals for ultrasonic imaging

Bertrand Dubus, Charles Croënne, Anne-Christine Hladky, Jerome O. Vasseur, A. Tinel, B. Morvan

6th Forum Acusticum, 2011, Aalborg, Denmark. pp.987-990. ⟨hal-00799669⟩

• Chapitre d'ouvrage

All-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser, A. Cathelin

Iniewski K. CMOS nanoelectronics : analog and RF VLSI circuits, McGraw-Hill Professional, chapter 4, 137-160, 2011, ISBN 978-0-07-175566-8. ⟨hal-00799651⟩

• Article dans une revue

A controllable bandwidth filter using varactor-loaded metamaterial-inspired transmission lines

Alejandro Borja, Jorge Carbonell, Jorge D. Martinez, Vicente Boria, Didier Lippens

This letter presents a tunable bandwidth bandpass filter based on varactor-loaded metamaterial coplanar waveguide (CPW) lines. The CPW lines are based on series gaps and split-ring resonators. The varactors are reverse-biased semiconductor diodes connected between both sides of each series gap.…

IEEE Antennas and Wireless Propagation Letters, 2011, 10, pp.1575-1578. ⟨10.1109/LAWP.2012.2183111⟩. ⟨hal-00783383⟩

• Communication dans un congrès

Microwave performances of 100nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrates

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799793⟩

• Communication dans un congrès

Low-temperature zero-level packaging technique using photoresitive film type PerMX polymer

S. Seok, J. Kim, N. Rolland, P.A. Rolland

16th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS'11, 2011, Beijing, China. pp.334-337, ⟨10.1109/TRANSDUCERS.2011.5969463⟩. ⟨hal-00799979⟩