Publications

Affichage de 8811 à 8820 sur 16378


  • Communication dans un congrès

RF operation of InAs quantum hot electron transistors

H. Nguyen Van, A. N. Baranov, M. Zaknoune, R. Teissier

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801051⟩

  • Communication dans un congrès

Graphene layers grown by RTP-CVD on nickel and their properties

H. Kim, E. Pichonat, D. Vignaud, D. Pavlidis, H. Happy

11th Expert Meeting on Evaluation and Control of Coumpound Semiconductor Materials & Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801046⟩

  • Article dans une revue

Magnetic and electric coupling effects of dielectric metamaterial

F. Zhang, L. Kang, Q. Zhao, J. Zhou, D. Lippens

New Journal of Physics, 2012, 14, pp.033031-1-15. ⟨10.1088/1367-2630/14/3/033031⟩. ⟨hal-00786984⟩

  • Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

  • Article dans une revue

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩

  • Article dans une revue

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩

  • Article dans une revue

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

T. Xu, K.A. Dick, S.R. Plissard, T.H. Nguyen, Y. Makoudi, Maxime Berthe, J.P. Nys, X. Wallart, B. Grandidier, P. Caroff

Nanotechnology, 2012, 23, pp.095702-1-9. ⟨10.1088/0957-4484/23/9/095702⟩. ⟨hal-00787477⟩

  • Article dans une revue

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink

Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩

  • Article dans une revue

A 10 Gb/s 45 mW adaptive 60 GHz baseband in 65 nm CMOS

C. Thakkar, L. Kong, K. Jung, A. Frappe, E. Alon

IEEE Journal of Solid-State Circuits, 2012, 47, pp.952-968. ⟨10.1109/JSSC.2012.2184651⟩. ⟨hal-00787383⟩

  • Communication dans un congrès

Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications

Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt

EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩