Publications

• Article dans une revue

Dielectric properties at microwaves frequencies of (Ni, Ti, La, Mg)-doped Ba0.3Sr0.7TiO3 thin films deposited on high-resistivity silicon substrates

Freddy Ponchel, Denis Remiens, J. Midy, Jean-François Legier, Caroline Soyer, T. Lasri, G. Guegan

Journal of the American Ceramic Society, 2011, 94, pp.1661-1663. ⟨10.1111/j.1551-2916.2011.04546.x⟩. ⟨hal-00603030⟩

• Article dans une revue

Band gap engineering in simultaneous phononic and photonic crystal slabs

Bahram Djafari-Rouhani, Yan Pennec, El Houssaine El Boudouti, Jerome O. Vasseur, Youssef El Hassouani, C. Li, Abdellatif Akjouj, Driss Bria

We discuss the simultaneous existence of phononic and photonic band gaps in two types of phononic crystals slabs, namely periodic arrays of nanoholes in a Si membrane and of Si nanodots on a SiO2 membrane. In the former geometry, we investigate in detail both the boron nitride lattice and the…

Applied physics. A, Materials science & processing, 2011, 103, pp.735-739. ⟨10.1007/s00339-010-6207-x⟩. ⟨hal-00603012⟩

• Article dans une revue

Above 600 mS/mm transconductance with 2.3 A/mm drain current density AlN/GaN high electron mobility transistors grown on silicon

F Medjdoub, Malek Zegaoui, Nicolas Waldhoff, B. Grimbert, N. Rolland, Paul-Alain Rolland

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (6), pp.064106-1-3. ⟨10.1143/APEX.4.064106⟩. ⟨hal-00603010⟩

• Communication dans un congrès

Etude des performances en puissance des TBH Si/SiGe pour les applications millimétriques

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, D. Ducatteau, Sylvie Lepilliet, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.6E2, 1-4. ⟨hal-00603137⟩

• Article dans une revue

A silicon nanowire ion-sensitive field-effect-transistor with elementary charge sensitivity

N. Clement, K. Nishiguchi, Jean-François Dufrêche, David Guérin, A. Fujiwara, D. Vuillaume

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nanoscale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte…

Applied Physics Letters, 2011, 98, pp.014104-3. ⟨10.1063/1.3535958⟩. ⟨hal-00572646⟩

• Article dans une revue

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

F.J. Ferrer, E. Moreau, D. Vignaud, D. Deresmes, S. Godey, X. Wallart

The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene…

Journal of Applied Physics, 2011, 109 (5), pp.054307-1-6. ⟨10.1063/1.3560896⟩. ⟨hal-00577059⟩

• Article dans une revue

Influence of a localized defect on acoustic field correlation in a reverberant medium

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Journal of Applied Physics, 2011, 110, pp.084906-1-8. ⟨10.1063/1.3652907⟩. ⟨hal-00639940⟩

• Article dans une revue

Phase-control in two-dimensional phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, K. Runge, P.A. Deymier

A theoretical model is developed to ascertain the necessary band structure and equi-frequency contour (EFC) features of two-dimensional phononic crystals (PCs) for the realization of phase control between propagating acoustic waves. Two different PCs, a square array of cylindrical polyvinylchloride…

Journal of Applied Physics, 2011, 110 (7), pp.074507. ⟨10.1063/1.3641634⟩. ⟨hal-00639810⟩

• Article dans une revue

Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Y. Wang, P. Ruterana, H.P. Lei, Jie Chen, S. Kret, S. El Kazzi, L. Desplanque, X. Wallart

Journal of Applied Physics, 2011, 110, pp.043509-1-8. ⟨10.1063/1.3622321⟩. ⟨hal-00639828⟩

• Article dans une revue

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

S. Galambosi, L. Wirtz, J.A. Soininen, J. Serrano, A. Marini, K. Watanabe, T. Taniguchi, S. Huotari, A. Rubio, K. Hamalainen

The anisotropy of the valence energy-loss function of hexagonal boron nitride (hBN) is shown to be largely enhanced by the highly inhomogeneous character of the excitonic states. The energy loss with momentum transfer parallel to the BN layers is dominated by strongly bound, quasi-two-dimensional…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (8), pp.081413. ⟨10.1103/PhysRevB.83.081413⟩. ⟨hal-00579067⟩