Publications

• Communication dans un congrès

The discontinuous Galerkin finite element method for electromagnetics and elastodynamics

B. Vandewoestyne, Olivier Bou Matar, H. de Gersem, K. van den Abeele

5th International Conference on Advanced Computational Methods in Engineering, ACOMEN 2011, 2011, Liège, Belgium. ⟨hal-00807177⟩

• Communication dans un congrès

High-resolution characterization of the charge transport in nano-organized bulk heterojunction photovoltaic layers

D. Moerman, O. Douheret, K. Lmimouni, D. Vuillaume, R. Lazzaroni

7th Plastic Electronics Conference, PE 2011, 2011, Dresden, Germany. ⟨hal-00807198⟩

• Communication dans un congrès

Improved Green's functions algorithms for the modeling of semiconductor nanostructures and devices

Y.M. Niquet, C. Delerue

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States. ⟨hal-00807250⟩

• Communication dans un congrès

Etude de différentes filières de matériaux semi-conducteurs pour la modulation optique

F. Leroy

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806687⟩

• Communication dans un congrès

Guide d'onde à fentes pour la détection des chutes sur les voies ferroviaires

A. Mroue, M. Heddebaut, Fouzia Boukour, Atika Rivenq

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 169, 2E19, 1-4. ⟨hal-00603130⟩

• Communication dans un congrès

Impact of gate length on the device performance of passivated InAlN/GaN HFET

N. Ketteniss, F. Lecourt, H. Behmenburg, A. Noculak, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, A. Vescan

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2. ⟨hal-00603114⟩

• Article dans une revue

Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

IEEE Transactions on Electron Devices, 2011, 58, pp.1594-1596. ⟨10.1109/TED.2011.2119486⟩. ⟨hal-00603002⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at…

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Communication dans un congrès

Second-order modeling for Rayleigh flat fading channel estimation with Kalman filter

L. Ros, E.P. Simon

17th International Conference on Digital Signal Processing, DSP 2011, 2011, Corfu, Greece. pp.1-6, ⟨10.1109/ICDSP.2011.6004912⟩. ⟨hal-00800319⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential…

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩