Publications

• Communication dans un congrès

Mécanismes ioniques de reconnaissance moléculaire : un outil d'auto assemblage pour les nanotechnologies

F. Cleri

Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807252⟩

• Communication dans un congrès

Theoretical investigation of thermal resistance at the Si/SiO2 interface

E. Lampin, F. Cleri, Q.H. Nguyen, P.A. Francioso

Materials Research Society Fall Meeting, MRS Fall 2011, Symposium W : Phonons in nanomaterials - Theory, experiments, and applications, 2011, Boston, MA, United States. ⟨hal-00807263⟩

• Communication dans un congrès

[Invited] Single electron and spin transport in semiconductor nanowire quantum dots

Renaud Leturcq

IAP Workshop on Semiconductor Quantum Dots and Nanowires, 2011, Louvain-la-Neuve, Belgium. ⟨hal-00986881⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the…

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were…

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman…

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

• Communication dans un congrès

Développement de capteurs ultrasonores interdigités HF pour le CND des couches et des revêtements

J. Deboucq, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot

Journées COFREND, Conférences et exposition sur les essais non destructifs, 2011, Dunkerque, France. Papier 137, 1-10. ⟨hal-00806711⟩

• Chapitre d'ouvrage

Scanning tunneling microscopy and spectroscopy of semiconductor materials

B. Grandidier

Bhattacharya P., Fornari R., Kamimura H. Comprehensive semiconductor science and technology, Elsevier, pp.Volume 4, 262-286, 2011. ⟨hal-00591735⟩

• Autre publication scientifique

Conception et réalisation d'un front-end analogique pour un récepteur multistandard multi-mode

Christian Izquierdo

2011. ⟨hal-00591805⟩