Publications

Affichage de 8891 à 8900 sur 16271


  • Communication dans un congrès

B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

S. Gautier, M. Abid, T. Moudakir, G. Orsal, V. Ravindran, O. Naciri, A. Migan-Dubois, Z. Djebbour, David Troadec, A. Soltani, G. Patriarche, A. Ougazzaden

SPIE 2011, Jan 2011, San Francisco, United States. ⟨hal-00578877⟩

  • Article dans une revue

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at…

Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩

  • Article dans une revue

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of…

Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554254⟩

  • Communication dans un congrès

TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors

L. Silvestri, S. Reggiani, V. Passi, F. Ravaux, Emmanuel Dubois, J.P. Raskin, S. Clavaguera, A. Carella, C. Celle, J.P. Simonato

41st European Solid-State Device Research Conference, ESSDERC 2011, 2011, Helsinki, Finland. paper ID 5173, 131-134. ⟨hal-00800024⟩

  • Communication dans un congrès

Far-field THz radiation pattern from photoconductive emitters on different substrates

J. Klier, S. Wohnsiedler, W. Zouaghi, Emilien Peytavit, Jean-Francois Lampin, J. Jonuscheit, R. Beigang

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, 2011, Houston, TX, United States. paper Th4E.4, 1-2, ⟨10.1109/irmmw-THz.2011.6104974⟩. ⟨hal-00800482⟩

  • Communication dans un congrès

Study of enhanced biosensors based on 2-D sandwiched plasmon photonic crystals

Jin-Ying Zhang, He Huang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, J. Zhou, Y.P. Huang

A novel sandwich structure of photonic crystal with periodic square array of hexagon holes was fabricated. The infrared optical properties in reflectance of the devices were tested. A sharp peak of surface plasmon resonance was observed at the incident angles of 30°. By the comparison of the…

IEEE Sensors Conference, 2011, Limerick, Ireland. pp.1321-1324, ⟨10.1109/ICSENS.2011.6126900⟩. ⟨hal-00800449⟩

  • Communication dans un congrès

Squeezing radiation from quantum cascade lasers with leaky waves

Miguel Beruete, Tahsin Akalin, Miguel Navarro-Cia, Guillaume Ducournau, Jean-Francois Lampin, Mario Sorolla

Several flat antennas consisting of a central slot surrounded by a metallic periodic structure are proposed to enhance the radiation of quantum cascade laser terahertz sources. A simulation study of the optimal profile for high gain and radiation efficiency is done. Prototypes are being fabricated

36th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.1, 1-2, ⟨10.1109/irmmw-THz.2011.6105066⟩. ⟨hal-00800485⟩

  • Communication dans un congrès

Electron-phonon scattering in Si and Ge : from bulk to nanodevices

D. Rideau, W. Zhang, Y.M. Niquet, C. Delerue, C. Tavernier, H. Jaouen

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, 2011, Osaka, Japan. pp.47-50, ⟨10.1109/SISPAD.2011.6035046⟩. ⟨hal-00800089⟩