Publications
Affichage de 8931 à 8940 sur 16098
Electromagnetic Reverberation Chambers
Philippe Besnier, Bernard Démoulin
ISTE/Wiley, pp.400, 2011, P.N.Favennec. ⟨hal-00640424⟩
[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices
H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu
IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩
Conception of patch antenna at wide band
M. Iftissane, S. Bri, L. Zenkouar, A. Mamouni
International Journal of Emerging Sciences, 2011, 1, pp.400-417. ⟨hal-00639914⟩
Deposition of crack-free 30 µm AlN on IDT/ZnO/Si for wave guiding layer acoustic wave applications
O. Legrani, O. Elmazria, P. Pigeat, A. Bartasyte, S. Zhgoon, Abdelkrim Talbi
IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.2313-2316, ⟨10.1109/ULTSYM.2011.0574⟩. ⟨hal-00799998⟩
Etude et optimisation de dispositifs à base de matériaux faible gap pour applications hautes fréquences et ultra faible consommation
Albert M.D. Noudeviwa
2011. ⟨hal-00799384⟩
Etude, conception et réalisation de transitions verticales coaxiales pour une intégration hétérogène 3D de microsystèmes en gamme millimétrique
Romain Crunelle
2011. ⟨hal-00799390⟩
Low loss zero-level packaging for high frequency RF applications by using PerMX film photoresist
J. Kim, S. Seok, N. Rolland, P. Rolland
41st European Microwave Conference, EuMC 2011, 2011, Manchester, United Kingdom. pp.273-276. ⟨hal-00799974⟩
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref
European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩
Effect of dimensional parameters on the current of MSM photodetector
Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster
Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn
Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩