Publications

• Communication dans un congrès

Ultrafast laser-induced periodic-surface structure: Formation mechanisms and applications in laser marking

Jean-Philippe Colombier, Florence Garrelie, Florent Pigeon, Razvan Stoian, Mourad Bounhalli, Stéphanie Reynaud, Nicolas Faure, Philippe Brunet, Benjamin Dusser, Eric Audouard

Ultrafast laser radiation has a strong potential for surface structuring on ultimate scales due to a strongly localized character of energy deposition. Additionally, the appearance of periodic surface patterns with subwavelength dimensions, usually known as laser-induced periodic surface structure…

The 12th International Symposium on Laser Precision Microfabrication, Jun 2011, Takamatsu, Japan. ⟨ujm-00597720⟩

• Article dans une revue

Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

Christophe Krzeminski, Evelyne Lampin

The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/…

The European Physical Journal B: Condensed Matter and Complex Systems, 2011, 81, pp.283-290. ⟨10.1140/epjb/e2011-10958-7⟩. ⟨hal-00600162⟩

• Communication dans un congrès

Elastomer based frequency agile antennas in the 60 GHz band

S. Hage-Ali, Nicolas Tiercelin, Philippe Coquet, Yannick Dusch, Y. Orlic, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod

Transducers 2011, Jun 2011, Pekin, China. ⟨hal-00664861⟩

• Article dans une revue

[Invited paper] Polynomial approach modeling of resonator piezoelectric disc

L. Elmaimouni, Jean-Etienne Lefebvre, F.E. Ratolojanahary, A. Raherison, B. Bahani, Tadeusz Gryba

Legendre polynomial method which describes the structure and incorporates automatically the boundary conditions in constitutive and propagation equations is used to model acoustic wave cylindrical resonators. It is the first time this method is applied to study standing rather than propagative…

Key Engineering Materials, 2011, 482, pp.11-20. ⟨10.4028/www.scientific.net/KEM.482.11⟩. ⟨hal-00597102⟩

• Article dans une revue

Microfabricated microfluidic fuel cells

Ai Kamitani, Satoshi Morishita, Hiroshi Kotaki, S. Arscott

Sensors and Actuators B: Chemical, 2011, 154 (2), pp.174-180. ⟨10.1016/j.snb.2009.11.014⟩. ⟨hal-02345763⟩

• Article dans une revue

SU-8 micropatterning for microfluidic droplet and microparticle focusing

Damien Debuisson, Vincent Senez, S. Arscott

Journal of Micromechanics and Microengineering, 2011, 21 (6), pp.065011. ⟨10.1088/0960-1317/21/6/065011⟩. ⟨hal-02345784⟩

• Article dans une revue

Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview

F. Martins, B. Hackens, Hermann Sellier, Peng Liu, M. Pala, S. Baltazar, L. Desplanque, X. Wallart, V. Bayot, Serge Huant

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the…

Acta Physica Polonica A, 2011, 119 (5), pp.569-575. ⟨10.12693/APhysPolA.119.569⟩. ⟨hal-00834932⟩

• Article dans une revue

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Hermann Sellier, B. Hackens, M. G. Pala, F. Martins, S. Baltazar, X. Wallart, L. Desplanque, Vincent Bayot, Serge Huant

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarize a selection of its successful achievements found in the…

Semiconductor Science and Technology, 2011, 26 (6), pp.064008. ⟨10.1088/0268-1242/26/6/064008⟩. ⟨hal-00709523⟩

• Article dans une revue

CMOS inverter based on Schottky source-drain MOS technology with low-temperature dopant segregation

G. Larrieu, Emmanuel Dubois

This letter demonstrates the integration of complementary dopant-segregated Schottky barrier MOSFETs into CMOS inverters. The implementation of a valence-band-edge silicide, namely, PtSi, associated to arsenic (As) and boron (B) low-temperature segregation is validated for the first time at the…

IEEE Electron Device Letters, 2011, 32 (6), pp.728-730. ⟨10.1109/LED.2011.2131111⟩. ⟨hal-00603004⟩

• Brevet

Procédé de fabrication de transistors MOSFET complémentaires de type P et N, et dispositif électronique comprenant de tels transistors, et processeur comprenant au moins un tel dispositif

Guilhem Larrieu, Emmanuel Dubois