Publications

• Article dans une revue

Exploit the bandwidth capacities of the perfluorinated graded index polymer optical fiber for multi-services distribution

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

The study reported here deals with the exploitation of perfluorinated graded index polymer optical fiber bandwidth to add further services in a home/office network. The fiber properties are exhibited in order to check if perfluorinated graded index plastic optical fiber (PFGI-POF) is suitable to…

Polymers, 2011, 3 (3), pp.1006-1028. ⟨10.3390/polym3031006⟩. ⟨hal-00639804⟩

• Communication dans un congrès

Cylindre roulant à proximité d'un plan à bas Reynolds

Christophe Frankiewicz, Alain Merlen

L'écoulement bas Reynolds autour d'un cylindre roulant à proximité d'un plan a été étudié analytiquement et numériquement.En régime de Stokes,une solution analytique exacte a été trouvée lorsque le cylindre est en contact avec la paroi.Ce problème bidimensionnel révèle la nécessité…

CFM 2011 - 20ème Congrès Français de Mécanique, Aug 2011, Besançon, France. ⟨hal-03422727⟩

• Article dans une revue

A metal-metal Fabry-Pérot cavity photoconductor for efficient GaAs terahertz photomixers

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Journal of Applied Physics, 2011, 109 (1), pp.016101. ⟨10.1063/1.3525709⟩. ⟨hal-00572645⟩

• Chapitre d'ouvrage

GaN-based on large diameter Si substrate for next generation of high power/high temperature devices

F Medjdoub

Iniewski K. Nano-semiconductors : devices and technology, CRC Press, chapter 16, 461-484, 2011, ISBN 978-1-4398-4835-7. ⟨hal-00799648⟩

• Article dans une revue

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved…

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩

• Article dans une revue

Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current…

IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩

• Article dans une revue

Optical and electrochemical properties of tunable host-guest complexes linked to plasmonic interfaces

Fatiha Barka-Bouaifel, Joanna Niedziółka-Jönsson, Xavier Castel, Ophélie Saison-Francioso, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Patrice Woisel, Joël Lyskawa, Léna Sambe, Graeme Cooke, Nacer Bezzi, Rabah Boukherroub, Sabine Szunerits

This article describes the use of localized surface plasmon resonance (LSPR) interface to detect complexation/decomplexation steps of a controllable host–guest system at the solid–liquid interface. The LSPR interfaces consist of a sandwiched structure comprising a tin-doped indium oxide (ITO)…

Journal of Materials Chemistry, 2011, 21 (9), pp.3006-3013. ⟨10.1039/c0jm03293j⟩. ⟨hal-00579079⟩

• Article dans une revue

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref

European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩

• Article dans une revue

Effect of dimensional parameters on the current of MSM photodetector

Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with…

Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩

• Article dans une revue

InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn

Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩